K. Takagi,
K. Matsushita,
K. Masuda,
S. Nakanishi, T. Soejima,
H. Sakurai,
K. Onodera,
J. Shim,
H. Kawasaki,
Y. Takada,
M. Hirose,
K. Tsuda
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ABSTRACT: AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed with an achievable fmax of 138GHz. A 6.4mm gate periphery device was thereafter designed with pre-match circuits on the die and matching circuits on an alumina substrate at Ka-band. A saturated output power of 18.5W was achieved at 31GHz which to the best of our knowledge is the highest ever reported at Ka-band.
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International; 07/2011
