H. Sjöland

Publications (2)2.31 Total impact

• Article: A technique for improving gain and noise figure of common-gate wideband LNAs

  G. H. Zare Fatin, Z. D. Koozehkanani, H. Sjöland
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  ABSTRACT: A technique for improving gain and noise performance of differential wideband common-gate low noise amplifiers is presented. It is based on current bleeding and noise cancellation. An amplifier employing the technique has been designed and simulated in a 90nm standard CMOS process using a 1V supply. It has been compared to designs using both basic and cross-coupled common-gate topologies. Simulation results confirm the improvements in gain and noise figure, yielding a superior figure of merit for the new technique. KeywordsLNA-CMOS-Common-gate-Wideband-Noise-cancelling-Current-reuse
  Analog Integrated Circuits and Signal Processing 04/2012; 65(2):239-244. · 0.59 Impact Factor
• Article: A 90 nm CMOS 11 dBm IIP3 4 mW Dual-Band LNA for Cellular Handsets

  G.Z. Fatin, Z.D. Koozehkanani, H. Sjöland
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  ABSTRACT: A dual-band cross-coupled common-gate low noise amplifier (LNA) utilizing post distortion cancellation is introduced. A differential pair biased in weak inversion is used to cancel the third-order intermodulation (IMD3) distortion of the main amplifier. An on-chip circuit is used for biasing the main and auxiliary amplifier. The IIP3 of the LNA is improved by more than 4 dB in both bands, located at 1.8 and 2 GHz, respectively. The IIP3 of the amplifier is +11 dBm, the gain is 15 and 16 dB, and the Noise Figure (NF) is 4 and 3.5 dB in the low and high bands, respectively. The LNA is implemented in a 90 nm CMOS process and draws 4 mA from a 1 V supply.
  IEEE Microwave and Wireless Components Letters 10/2010; · 1.72 Impact Factor