R. Kaushik

Virginia Polytechnic Institute and State University, Blacksburg, VA, United States

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Publications (3)1.67 Total impact

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    ABSTRACT: This work presents a novel hybrid packaging structure for high-temperature SiC power modules that combines the benefits of both the wirebond structure and the planar structure. With the hybrid structure, the power modules can achieve the same footprint and similar parasitics, but much easier fabrication process and more reliable top-side interconnections, compared with regular planar structures. The new structure and its fabrication process are presented and a prototype module is built based on SiC JFET. Detailed comparisons are also conducted between the hybrid, planar, and wirebond structures. The results reveal the better performances of the hybrid structure in smaller parasitics than the wirebond structure, and easier fabrication than the planar structure. Finally, a multiple chips hybrid structure power module is built and tested in high temperature.
    Energy Conversion Congress and Exposition (ECCE), 2011 IEEE; 10/2011
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    ABSTRACT: In order to take full advantage of the SiC devices' high-temperature and high-frequency capabilities, a transformer isolated gate driver is designed for the SiC JFET phase leg module to achieve a fast switching speed of 26V/ns and a small cross-talking voltage of 4.2V in a 650V and 5A inductive load test. Transformer isolated gate drive circuits suitable for high-temperature applications are compared with respect to different criteria. Based on the comparison, an improved edge triggered gate drive topology is proposed. Then, using the proposed gate drive topology, special issues in the phase-leg gate drive design are discussed. Several strategies are implemented to improve the phase-leg gate drive performance and alleviate the cross-talking issue. Simulation and experimental results are given for verification purposes.
    01/2011;
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    ABSTRACT: High temperature (HT) converters have become more and more important in industrial applications where the converters will operate in a harsh environment. These environments require the converter to have not only high-temperature semiconductor devices (SiC, GaN) but also high-temperature control electronics. This paper describes a design process for a three-phase PWM rectifier. The SiC JFET planar structure is used for the main semiconductor devices. Other high-temperature components, including the passive components, silicon-on-insulator chips and the auxiliary components are studied and summarized. Finally, a 1.4 kW lab prototype is fabricated and tested for verification.
    Energy Conversion Congress and Exposition (ECCE), 2010 IEEE; 10/2010

Publication Stats

14 Citations
1.67 Total Impact Points

Institutions

  • 2010–2011
    • Virginia Polytechnic Institute and State University
      • Department of Electrical and Computer Engineering
      Blacksburg, VA, United States