ABSTRACT: For the first time, we developed an on-the-fly method OFIT to measure the interface trap density N<sub>IT</sub> without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of t<sup>n</sup> time evolution of DeltaN<sub>IT</sub> under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed V<sub>th</sub> measurement, we successfully decompose the NBTI DeltaV<sub>TH</sub> into interface trap component DeltaV<sub>TH</sub> <sup>IT</sup> and oxide charge component DeltaV<sub>TH</sub> <sup>OX</sup> quantitatively for the p-MOSFETs with SiON gate dielectric.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008