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Publications (3)7.94 Total impact

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    ABSTRACT: The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.
    Journal of Applied Physics 08/1988; · 2.21 Impact Factor
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    ABSTRACT: The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si‐on‐insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near‐surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60‐keV <sup>2</sup><sup>9</sup>Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 10<sup>8</sup> cm<sup>-</sup><sup>2</sup> in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
    Journal of Applied Physics 03/1988; · 2.21 Impact Factor
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    ABSTRACT: Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si‐on‐insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield, x‐ray diffraction peak width, and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4 μm many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross‐sectional transmission electron microscopy reveals an average defect density of ∼10<sup>8</sup> cm<sup>-</sup><sup>2</sup> in the GaAs layer, which is similar to the density in GaAs films grown directly on Si.
    Applied Physics Letters 11/1987; · 3.52 Impact Factor