Publications (3)4.34 Total impact
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Conference Proceeding: Overview of FDSOI technology from substrate to device
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ABSTRACT: To meet low power circuit requirements, increased channel mobility is required to boost transistor performance and reduce Vdd for lower power dissipation without performance penalty. SOI and more advanced engineered substrates developed on the SOI platform provide solutions for 32 technology nodes and beyond. The options include process-induced strain, biaxial strain virtual substrates, modification of surface and channel orientation, or selection of channel materials with high mobility and high saturation velocities such as Ge, SiGe alloys, and III/V compound semiconductors. The ultra-thin-body SOI devices with undoped and strained channels can be used to control the SCE and reduce the sub-threshold leakage for scaling and low power dissipation. Such fully depleted devices promise excellent performance, high circuit density at very low power, a critically important attribute for the rapidly growing realm of portable consumer electronics like smart phone and mobile internet device. In addition, SOI enables some unique applications that would be very difficult if not impossible in bulk Si, such as RF devices in high resistivity substrates, ultra-thin RFID chips, backside imagers, MEMS, photonic integrated circuits, and flexible electronics.Semiconductor Device Research Symposium, 2009. ISDRS '09. International; 01/2010 -
Article: Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability
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ABSTRACT: We study the performance and reliability of metal-oxide-semiconductor field effect transistors fabricated on strained and unstrained silicon on insulator substrates, sSOI and SOI, respectively. The biaxial strain strongly enhances electron mobility and changes the threshold voltage, V<sub>t</sub> , of the devices. We show that the V<sub>t</sub> shift in the “ideal SOI structures,” i.e., with no oxide defects, is due to the conduction band offset induced by strain ΔE<sub>c</sub> and therefore can be used for the stress monitoring. The biaxial strain also affects the gate oxide leakage current. A new method to extract ΔE<sub>c</sub> from the leakage current measurements is proposed. This method is less sensitive to the gate oxide defects than the one based on V<sub>t</sub> shift. A complete modeling of leakage current in SOI and sSOI transistors is presented. Due to the strong confinement at the Si / SiO <sub>2</sub> interface the leakage current in the Fowler–Nordheim (FN) regime mainly results from electron tunneling in the subband associated to the ground level E<sub>0</sub><sup>Δ2</sup> . A simple FN model is therefore used to extract the ΔE<sub>c</sub> from the variation in the effective barrier height Φ<sub>b</sub><sup> FN </sup> between the Si film and the SiO <sub>2</sub> oxide. Based on this experimental and accurate extraction of ΔE<sub>c</sub> , realistic values of the deformation potentials in Si are finally proposed. The final part of the paper discusses the different implications of this band offset ΔE<sub>c</sub> on device performance and reliability. It is demonstrated that strained devices exhibit reduced - leakage currents and a superior reliability, in terms of interface state density and oxide breakdown, than unstrained devices.Journal of Applied Physics 07/2009; · 2.17 Impact Factor -
Article: Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H
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ABSTRACT: We have performed systematic measurements of the splitting kinetics induced by H-only and He + H sequential ion implantation into relaxed Si <sub>0.8</sub> Ge <sub>0.2</sub> layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si <sub>0.8</sub> Ge <sub>0.2</sub> . Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si <sub>0.8</sub> Ge <sub>0.2</sub> than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role.Journal of Applied Physics 01/2009; · 2.17 Impact Factor
