R. Quay,

F. van Raay,

J. Kuhn,

R. Kiefer,

P. Waltereit,

M. Zorcic,

M. Musser,

W. Bronner,

M. Dammann,

M. Seelmann-Eggebert,

M. Schlechtweg,

M. Mikulla,

O. Ambacher,

J. Thorpe,

K. Riepe,

F. van Rijs, M. Saad,

L. Harm,

T. Rodle [Show abstract] [Hide abstract]

**ABSTRACT:** This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i. SiC substrates. Dual-stage MMICs in microstrip transmission-line technology yield a power-added efficiency of Â¿40% at 8.56 GHz for a power level of Â¿11 W. A single-stage MMIC yields a PAE of Â¿55% with 6 W of output power at V<sub>DS</sub>= 20 V. The related mobile communication power HEMT process yields an average power density of 10 W/mm at 2 GHz and V<sub>DS</sub>= 50 V. The average PAE is 61.3% with an average linear gain 24.4 dB and low standard deviation of all parameters. The devices yield more than 25 W/mm of output power at 2 GHz when operated in cw at V<sub>DS</sub>= 100 V with an associated PAE of Â¿60%. The GaN HEMT process with 0.5 Â¿m gate-length yields an extrapolated lifetime of 10<sup>5</sup> h when operated at V<sub>DS</sub>= 50 V at a channel temperature of 90Â°C. When operated at 2 GHz devices with 480 Â¿m gate-width yield a change of the RF power-gain of less than 0.2 dB under high gain-compression at V<sub>DS</sub>= 50 V and a channel temperature of 250Â°C. Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European; 11/2008