[show abstract][hide abstract] ABSTRACT: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. The devices exhibit excellent static and dynamic properties with encouraging preliminary reliability. Twenty-four MOSFETs and twelve Schottky diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE; 10/2011
[show abstract][hide abstract] ABSTRACT: A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200 o C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.
[show abstract][hide abstract] ABSTRACT: Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An effort underway by the Air Force Research Laboratory has lead to the development of a 1.2 kV/100 A SiC dual switch power module capable of operating at a junction temperature of 200degC. Two additional efforts are set on achieving the megawatt goal. An effort by the Army Research Laboratory is focused on 1.2 kV modules to be used for traction and power conversion applications. The highest power 1200 V all-SiC dual switch power modules produced is capable of 880 amps. A DARPA effort to develop a solid state power substation has produced a 10 kV/50 A SiC dual switch power module. Higher current modules in both voltage ratings have been designed. These SiC MOSFET modules represent the next level of integration for SiC power devices. This is a critical technical milestone in the progression toward highly reliable, high efficiency, power systems. This technology is relevant in the current energy-conscious environment and will translate to significant energy savings for hybrid and electric vehicles, solar power and alternative energy system inverters, and industrial motor drives.
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE; 10/2009
[show abstract][hide abstract] ABSTRACT: Discrete 4H-SiC PiN diode chips have been developed for extremely high power handling applications. These diodes have a forward voltage of less than 3.2 V at 180 A (100 A/cm) and are capable of blocking 4.5 kV with a reverse leakage current of less than one muA. At 1.5 cm times 1.5 cm, these discrete 4H-SiC PiN diode chips have over two times the area of the previous largest discrete 4H-SiC power device. Furthermore, considerable progress has been made in achieving V<sub>F</sub> stability, as no measurable increase in V<sub>F</sub> was observed on a packaged diode following a 120 hour DC stress at 90 A. When switched from 180 A forward current at a dI/dt of 300 A/mus, the diodes showed a peak reverse current of 50 A and a reverse recovery time of 320 ns. These diodes demonstrate the outstanding capabilities of 4H-SiC power devices given state-of-the-art 4H-SiC substrates, epitaxy, device design, and processing
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on; 07/2006