ABSTRACT: DNBTI on HfO<sub>2</sub> and HfSiON has been investigated. The DNBTI model under NBTI/passivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the; 08/2009