Lubing Shao

Publications (4)7.92 Total impact

• Article: -Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

  Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, Ming Liu
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  ABSTRACT: A memory cell based on n⁺-Si/ZrO₂/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 10⁴. The memory devices show a large on/off ratio of about 10⁶ and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.
  IEEE Electron Device Letters 05/2010; · 2.85 Impact Factor
• Article: Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures

  Yingtao Li, Shibing Long, Qi Liu, Qin Wang, Manhong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, Ming Liu
  physica status solidi (RRL) - Rapid Research Letters 04/2010; 4(5‐6):124 - 126. · 2.22 Impact Factor
• Article: Resistive Switching Properties of Structure for Low-Voltage Nonvolatile Memory Applications

  Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Lubing Shao, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, Ming Liu
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  ABSTRACT: The reliable resistive switching properties of Au/ZrO₂/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 10⁴), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
  IEEE Electron Device Letters 03/2010; · 2.85 Impact Factor
• Source

  Available from: Anton Grigoriev

  Article: Differential conductance as a promising approach for rapid DNA sequencing with nanopore-embedded electrodes

  Yuhui He, Lubing Shao, Ralph H Scheicher, Anton Grigoriev, Rajeev Ahuja, Shibing Long, Zhuoyu Ji, Zhaoan Yu, Ming Liu
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  ABSTRACT: We propose an approach for nanopore-based DNA sequencing using characteristic transverse differential conductance. Molecular dynamics and electron transport simulations show that the transverse differential conductance during the translocation of DNA through the nanopore is distinguishable enough for the detection of the base sequence and can withstand electrical noise caused by DNA structure fluctuation. Our findings demonstrate several advantages of the transverse conductance approach, which may lead to important applications in rapid genome sequencing.
  Applied Physics Letters. 97(4):043701+.