F. Bordas

Publications (8)1.03 Total impact

• Source

  Available from: ugent.be

  Article: Photonic integration in indium-phosphide membranes on silicon

  J. van der Tol, R. Zhang, J. Pello, F. Bordas, G. Roelkens, H. Ambrosius, P. Thijs, F. Karouta, M. Smit
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  ABSTRACT: A new photonic integration technique is presented, which enables the use of indium-phosphide-based membranes on top of silicon chips. This can provide the electronic chips (complementary metal-oxide semiconductor (CMOS)) with an added optical layer (indium-phosphide membrane on silicon (IMOS)) for resolving the communication bottleneck. Very small passive devices have been realised, with performances comparable to other membrane devices (propagation loss 7 dB/cm, negligible bending loss for micron size radii, 3 dB splitter with 0.6 dB excess loss, resonator with Q -factor of 15.500). Also, a new passive device is introduced, a 4.12 micron long polarisation converter which in simulations promises broadband performance and tolerant fabrication. Finally, an active/passive regrowth technique is investigated for submicron active regions within an otherwise mostly passive membrane. A good morphology is obtained around the interfaces between the active and passive regions. The processing involved did not damage the materials severely, so that light emission in micro-PL measurements was found. However, an increasing blue shift with decreasing size occurred, due to quantum well intermixing. Optimising the design and the processing can take care of this. Taken together, the results presented here show that it is feasible to realise extremely small passive and active devices in a photonic circuit in an InP membrane.
  IET Optoelectronics 11/2011; · 1.03 Impact Factor
• Conference Proceeding: Control of evanescent wave coupling in hybrid III #x2013;V/SOI nanolaser

  A Bazin, Y Halioua, T Karle, P Monnier, F Bordas, I Sagnes, R Raj, F Raineri
  Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference; 05/2011
• Source

  Available from: Timothy J Karle

  Conference Proceeding: Thermal improvement of InP wire photonic crystal laser on silicon by addition of Diamond Nanoparticles in polymer bonding layer

  A. Bazin, Y. Halioua, P. Monnier, F. Bordas, T. Karle, S. Perruchas, T. Gacoin, H. Girard, I. Sagnes, G. Roelkens, R. Raj, F. Raineri
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  ABSTRACT: Diamond Nanoparticles are added to BCB polymer in order to increase the thermal dissipation of InP-based photonic crystal cavity laser bonded on silicon. Optical measurement are performed to evaluate the enhancement of the heat sinking with nanoparticles density.
  Optical Communication (ECOC), 2010 36th European Conference and Exhibition on; 10/2010
• Conference Proceeding: Hybrid active photonic crystal structures: III-V based slow light waveguides or nanocavities coupled to SOI wires

  F Raineri, Y Halioua, T Karle, A Bazin, F Bordas, P Monnier, I Sagnes, G Roelkens, D Van Thourhout, R Raj
  Transparent Optical Networks (ICTON), 2010 12th International Conference on; 01/2010
• Source

  Available from: P.J. van Veldhoven

  Conference Proceeding: Compact passive devices in InP membrane on silicon

  F. Bordas, G. Roelkens, R. Zhang, E.J. Geluk, F. Karouta, J.J.G.M. van der Tol, P.J. van Veldhoven, R. Notzel, D. Van Thourhout, R. Baets, M.K. Smit
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  ABSTRACT: The high vertical index contrast and the small thickness of thin InP membranes (200 nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3 dB splitters and ring resonators).
  Optical Communication, 2009. ECOC '09. 35th European Conference on; 10/2009
• Source

  Available from: ac.cn

  Conference Proceeding: Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light

  F. Bordas, C. Seassal, E. Dupuy, P. Regreny, M. Gendry, M.J. Steel, A. Rahmani
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  ABSTRACT: We achieved room temperature laser operation, around 1.5 mum, with a single layer of InAs/InP quantum dots in a photonic crystal structure using confined slow light. The lasing threshold is a few hundred muW.
  Lasers and Electro-Optics, 2007. CLEO 2007. Conference on; 06/2007
• Source

  Available from: P.J. van Veldhoven

  Article: Compact grating coupled MMI on DVS-BCB bonded InP-membrane

  F Bordas, F Van Laere, G Roelkens, E J Geluk, F Karouta, P J Van Veldhoven, R Nötzel, D Van Thourhout, R Baets, M K Smit
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  ABSTRACT: Compact passive components have been successfully fabricated on 200 nm thick InP membrane BCB-bonded on a GaAs wafer. The characterization reveals that 400 nm wide wires show a loss <10dB/cm, S-bends have a loss of 2dB and a very compact MMI coupler (<20µm 2) show a loss of 0.6 dB.
• Source

  Available from: ugent.be

  Article: Submicron Active-Passive Integration for InP-based Membranes on Silicon

  R Zhang, F Bordas, J J G M Van Der Tol, H Ambrosius, G Roelkens, M A Dundar, M K Smit, P Thijs
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  ABSTRACT: The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.