R.W. Mann

University of Virginia, Charlottesville, Virginia, United States

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Publications (7)3.8 Total impact

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    ABSTRACT: Recent works show bias temperature instability (BTI) is a detrimental hard-aging mechanism in CMOS circuit design. Negative BTI (NBTI) alone degrades circuit speed upwards of 20% over a 10 year life-span. Having the ability to track the actual aging process provides one method to reduce large design margins that are otherwise required to offset circuit aging. This work extends previous research by contributing a sensing scheme that employs on-chip sensors capable of accurately tracking NBTI pMOS current degradations across process, temperature, and varying activity factors. Results show that a 7600 μm2 sensing area achieves an overall system accuracy of 90% at a voltage threshold precision of 2 mV. We thoroughly describe the sensor design and the underlying statistics used to determine overall accuracy and precision. Furthermore, a novel sensor distribution method is presented that uses an existing scan-chain methodology to mask the overhead of adding the on-chip sensors.
    IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11/2012; 20(11):1974-1985. DOI:10.1109/TVLSI.2011.2168246 · 1.36 Impact Factor
  • R.W. Mann · T.B. Hook · P.T. Nguyen · B.H. Calhoun
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    ABSTRACT: Competitive density, performance, and functional objectives of the SRAM bit cell require design rules which are much more aggressive than those used in base logic designs. Because soft fail yield in SRAM is dependent on the device threshold and threshold mismatch in the bit cell, much research has been directed toward addressing the random contributors to within-cell device threshold variation. We examine four sources of potential nonrandom threshold mismatch that can arise from the use of aggressive design rules in the bit cell: 1) implanted ion straggle in SiO2; 2) polysilicon inter-diffusion driven counter-doping; 3) lateral ion straggle from the photoresist; and 4) photoresist implant shadowing. Using simulation and hardware measurements, we quantify the device parametric impacts and provide a statistical treatment forming the basis for quantification of the functional margin impacts on the bit cell. We examine two lithography-compliant bit-cell layout topologies and quantify the impact of systematic mismatch on the margin limited yield.
    IEEE Transactions on Very Large Scale Integration (VLSI) Systems 07/2012; 20(7):1211-1220. DOI:10.1109/TVLSI.2011.2158863 · 1.36 Impact Factor
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    R.W. Mann · B.H. Calhoun
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    ABSTRACT: The extent to which the 6T SRAM bit cell can be perpetuated through continued scaling is of enormous technological and economic importance. Understanding the growing limitations in lithography, design and process technology, coupled with the mechanisms which drive systematic mismatch, provides direction in identifying more optimum solutions. We propose an alternative, ultra-thin (UT) SRAM cell layout topology as a means to address many of the challenging bit cell design constraints facing the most advanced CMOS process technologies today. Compared to the industry standard 6T topology, the newly proposed cell offers: 1) a lower bit line capacitance, 2) reduced M1 complexity and 3) notchless design for improved resistance to alignment induced device mismatch.
    Quality Electronic Design (ISQED), 2011 12th International Symposium on; 04/2011
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    ABSTRACT: Large scale 6T SRAM beyond 65 nm will increasingly rely on assist methods to overcome the functional limitations associated with scaling and the inherent read stability/write margin trade off. The primary focus of the circuit assist methods has been improved read or write margin with less attention given to the implications for performance. In this work, we introduce margin sensitivity and margin/delay analysis tools for assessing the functional effectiveness of the bias based assist methods and show the direct implications on voltage sensitive yield. A margin/delay analysis of bias based circuit assist methods is presented, highlighting the assist impact on the functional metrics, margin and performance. A means of categorizing the assist methods is developed to provide a first order understanding of the underlying mechanisms. The analysis spans four generations of low power technologies to show the trends and long term effectiveness of the circuit assist techniques in future low power bulk technologies.
    Solid-State Electronics 11/2010; 54(11-54):1398-1407. DOI:10.1016/j.sse.2010.06.009 · 1.50 Impact Factor
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    ABSTRACT: We propose a novel method that exploits BTI to partially offset variation and thus improve SRAM Vmin and yield. We show correlation between a bitcell's power-up state and its static noise margin. By applying stress with periodic re-power-up, device mismatch can be compensated by BTI induced changes. The proposed method has no extra design and area cost. It can be applied during burn-in test to offset manufacturing variation and/or used during the lifetime of the chip to offset variation from real-time aging and hence continue to improve the margins. Simulations in 45nm show that write, read, and hold Vmin at 6σ can be reduced by 128, 75, and 91 mV, respectively. Measurements from a 16Kb 45nm SRAM demonstrate the improvement of Vmin and yield.
    Custom Integrated Circuits Conference (CICC), 2010 IEEE; 10/2010
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    R.W. Mann · S. Nalam · Jiajing Wang · B.H. Calhoun
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    ABSTRACT: Reduced device dimensions and operating voltages that accompany technology scaling have led to increased design challenges with each successive technology node. Large scale 6T SRAM arrays beyond 65 nm will increasingly rely on assist methods to overcome the functional limitations imposed by increased variation, reduced overdrive and the inherent read stability/write margin trade off. Factors such as reliability, leakage and data retention establish the boundary conditions for the maximum voltage bias permitted for a given circuit assist approach. These constraints set an upper limit on the potential yield improvement that can be obtained for a given assist method and limit the minimum operation voltage (Vmin). By application of this set of constraints, we show that the read assist limit contour (ALC) in the margin/delay space can provide insight into the ultimate limits for the nano-scale CMOS 6T SRAM.
    Quality Electronic Design (ISQED), 2010 11th International Symposium on; 04/2010
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    ABSTRACT: This paper examines the impact of technology scaling to 22 nm on sub-threshold circuit design and proposes several solutions for sub-threshold circuits in new processes. To maintain energy-efficient sub-threshold operation, we must reduce variation and suppress leakage current. To combat random variation and minimize energy for nodes below 45 nm, we show that special strategies are needed for different categories of sub-threshold circuits.
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on; 06/2009

Publication Stats

53 Citations
3.80 Total Impact Points


  • 2009–2012
    • University of Virginia
      • Department of Electrical and Computer Engineering (ECE)
      Charlottesville, Virginia, United States