M. J. Jurkovic

Columbia University, New York City, New York, United States

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Publications (18)30.69 Total impact

  • Y. ZHAO, M. J. JURKOVIC, W. I. WANG
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    ABSTRACT: Transmission line measurements performed on AlSb/GaSb heterostructure buried InAs n-channels incorporating AuGe- and AuTe-based ohmic contacts show that the optimum contact resistance for Ni/AuGe/Ni/Au metallization is achieved at 325 degrees C for a 20 s annealing process (rho(c) = 2.3 x 10(-7) Omega cm(2), a record low for an AlSb/GaSb structure), whereas only 1.3 x 10(-5) Omega-cm(2) is obtained for the Ni/AuTe/Ni/Au system optimally annealed at 400 degrees C. Uniform alloyed surface morphology is observed in Ni/AuGe/Ni/Au contacts, while the blistered surface appearance of the Ni/AuTe/Ni/Au system correlates with degraded performance. Measured dc and microwave characteristics of 1 mu m gate length InAs n-channel high electron mobility transistors using AuGe- and AuTe-based source/drain contacts show that ohmic contact quality is critical to device performance.
    ChemInform 06/2010; 28(26). DOI:10.1002/chin.199726009
  • X. Yang, J. B. Heroux, M. J. Jurkovic, W. I. Wang
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    ABSTRACT: 1.3 μm InGaAsN:Sb/GaAs quantum well laser diodes (LDs) have been grown by solid source molecular beam epitaxy using Sb as a surfactant. A record low threshold of 1.02 kA/cm2 was achieved for broad area laser diodes under pulsed operation at room temperature. Performance of single quantum well (SQW) and multiple quantum well (MQW) InGaAsN:Sb LDs are compared. While the room temperature threshold and slope efficiency of MQW LDs remain almost the same as those of SQW LDs, the high temperature characteristics of MQW LDs are greatly improved. A record high operating temperature of 105 °C and a high characteristic temperature (T0) of 92 K below 75 °C are achieved for the InGaAsN:Sb/GaAs MQW LD. © 2000 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 05/2000; 18. DOI:10.1116/1.591409 · 1.36 Impact Factor
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    ABSTRACT: The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated. The doping behavior of Mg and resulting conductivity of the doped layers were found to strongly depend on the surface polarity of the growing GaN planes. The samples grown on the Ga-polar face (A face) exhibited a p-type conductivity with a free-hole concentration up to 5×1017 cm−3, while the samples grown on the N-polar face (B face) were highly resistive or semi-insulating. The incorporation of residual impurities (O, Si, and C) in the two different polar surfaces was studied by secondary ion mass spectrometry analysis and its effect on the Mg doping was discussed. Our results suggest that the A face (Ga face) is the favored surface polarity for achieving p-type conductivity during the growth of Mg-doped GaN. © 2000 American Institute of Physics.
    Applied Physics Letters 03/2000; 76(13):1740-1742. DOI:10.1063/1.126152 · 3.52 Impact Factor
  • X. Yang, J.B. Heroux, M.J. Jurkovic, W.I. Wang
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    ABSTRACT: 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well laser diodes have been grown by a solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm/sup 2/ and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 nm//spl deg/C are reported.
    IEEE Photonics Technology Letters 03/2000; DOI:10.1109/68.823492 · 2.18 Impact Factor
  • X. Yang, J. B. Heroux, M. J. Jurkovic, W. I. Wang
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    ABSTRACT: 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.
    Applied Physics Letters 02/2000; 76(7):795-797. DOI:10.1063/1.125587 · 3.52 Impact Factor
  • X. Yang, M.J. Jurkovic, J.B. Heroux, W.I. Wang
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    ABSTRACT: Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm/sup 2/ and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 /spl mu/m under pulsed operation at room temperature.
    Electronics Letters 07/1999; DOI:10.1049/el:19990746 · 1.07 Impact Factor
  • X. Yang, M. J. Jurkovic, J. B. Heroux, W. I. Wang
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    ABSTRACT: InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm2 was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 μm laser diode at room temperature under pulsed operation. © 1999 American Institute of Physics.
    Applied Physics Letters 07/1999; 75(2):178-180. DOI:10.1063/1.124311 · 3.52 Impact Factor
  • X. Yang, J. B. Heroux, M. J. Jurkovic, W. I. Wang
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    ABSTRACT: InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source molecular beam epitaxy using a N2 radio frequency plasma source. Photoluminescence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/GaAs quantum wells is shown to increase N incorporation and photoluminescence efficiency. A PL peak of 1.35 μm has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 °C. Room temperature pulsed operation of InGaAsN/GaAs single quantum well laser was demonstrated. © 1999 American Vacuum Society.
    Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 05/1999; 17(3):1144-1146. DOI:10.1116/1.590710 · 1.36 Impact Factor
  • F. Semendy, L. K. Li, M. J. Jurkovic, W. I. Wang
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    ABSTRACT: III-V GaN based semiconductors have recently attracted attention for their potential applications as multicolor light emitters, solar-blind ultraviolet detectors, and high power/high-temperature electronics. Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum wells showed band-edge emissions at 2.71 eV at low temperature (10 K). PL was investigated as a function of excitation intensity and temperature. The relationship between PL intensity and excitation intensity, as well as the relationship between PL intensity and lattice temperature was studied. Also studied was the combined effect of temperature and intensity variation. Detailed results are reported here.
    MRS Online Proceeding Library 01/1999; 595. DOI:10.1557/PROC-595-F99W11.37
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    ABSTRACT: Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm²/Vs with carrier sheet densities of 6.1 x 10¹² cm², and 5.8 x 10¹² cm² at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.
    MRS Online Proceeding Library 01/1999; 595. DOI:10.1557/PROC-595-F99W8.1
  • M. J. Jurkovic, J. Alperin, Q. Du, W. I. Wang, M. F. Chang
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    ABSTRACT: AlGaAs/GaAs Npn heterojunction bipolar transistors have been grown by molecular beam epitaxy on Si (311) substrates utilizing a GaAs buffer layer as thin as 2 μm and fabricated using a self-aligned base contact process. Reflection high-energy electron diffraction patterns correspond with antiphase domain-free growth. Direct current measurements for a 70×70 μ m <sup> 2 </sup> device reveal a small-signal common-emitter current gain of 10 and collector-emitter breakdown of 13 V at a collector current of 1.8 kA/cm <sup> 2 </sup>. These results indicate that further optimization in growth technique may render the growth of GaAs-on-Si (311) a viable candidate for application in high-power integration. © 1998 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 06/1998; DOI:10.1116/1.590228 · 1.36 Impact Factor
  • Y. Zhao, M.J. Jurkovic, W.I. Wang
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    ABSTRACT: AlSb/InAs n-channel inverted-structure high electron mobility transistors (i-HEMT's) are realized by incorporating a Si doping sheet into a thin InAs layer that is embedded within the lower AlSb barrier. i-HEMT's with a 1 μm ×25 μm gate size exhibit kink-free operation at room temperature with high drain current, high extrinsic transconductance, and low gate leakage. Results indicate potential for use in high-speed applications
    IEEE Transactions on Electron Devices 02/1998; DOI:10.1109/16.658855 · 2.36 Impact Factor
  • Y. Zhao, M.J. Jurkovic, W.I. Wang
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    ABSTRACT: Enhancement-mode InAs n-channel high electron mobility transistors (E-HEMT's) are realized by incorporating a Beryllium (Be) doping sheet within the upper barrier and utilization of an InAs surface layer. At room temperature, n-channel E-HEMT's with 1 mu m gate length exhibit extremely low output conductance (12 mS mm(-1)), high extrinsic transconductance (425 mS mm(-1) for V-DS = 0.8 V), and near zero threshold voltage. Our results demonstrate enhancement-mode operation of an InAs/AlSb heterojunction field-effect transistor. (C) 1998 Elsevier Science Ltd.
    Solid-State Electronics 01/1998; 42(1). DOI:10.1016/S0038-1101(97)00183-4 · 1.51 Impact Factor
  • Source
    M.J. Jurkovic, J. Alperin, Q. Du, W.I. Wang, M.F. Chang
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    ABSTRACT: AlGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311) substrates and fabricated using a self-aligned base contact process are reported. Reflection high energy electron diffraction patterns correlate with antiphase domain-free growth. Preliminary DC measurements for 70×70 μm<sup>2</sup> device reveal a small-signal common-emitter current gain of 10 and a collector-emitter breakdown voltage of 13 V
    Electronics Letters 10/1997; DOI:10.1049/el:19971113 · 1.07 Impact Factor
  • I. W. Tao, Y. Wang, M. Jurkovic, W. I. Wang
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    ABSTRACT: Although low threshold II‐VI blue/green lasers have been demonstrated, the device lifetime for these lasers remains an important issue. It has been observed that the dark line defects, which are caused by stacking faults or point defects, are related to the degradation of the lasers. In order to improve the reliability of the laser, we initiated studies of molecular beam epitaxial growth and device characteristics of II‐VI quantum well lasers grown in the (511)A orientation. The photoluminescence spectra of (511)A epilayers always exhibited stronger and sharper emission peaks than their (100) counterparts, which indicated that less defects are incorporated in the (511)A epilayers. Room‐temperature threshold current densities of 1 kA/cm<sup>2</sup> have been obtained. The performance of these lasers merits further studies on the use of (511)A as a possible solution to the reliability problem of II‐VI lasers. © 1995 American Institute of Physics.
    Journal of Applied Physics 09/1995; 78(4-78):2851 - 2853. DOI:10.1063/1.360087 · 2.19 Impact Factor
  • I. W. Tao, M. Jurkovic, W. I. Wang
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    ABSTRACT: We have grown Cl‐doped ZnTe under different growth conditions and N‐doped ZnTe on different orientations. n‐type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p‐type doping level of 1×10<sup>20</sup> cm<sup>-3</sup>, which is the highest reported, was obtained by substrate tilting. These phenomena can be analyzed by the surface bonding structure analogous to the impurity concentration in the III‐V compound semiconductors.
    Applied Physics Letters 05/1994; 64(14-64):1848 - 1849. DOI:10.1063/1.111775 · 3.52 Impact Factor
  • L. K. Li, Y. Wang, M. Jurkovic, W. I. Wang
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    ABSTRACT: High quality ZnSe epilayers have been successfully grown on a Ge (311) substrate by molecular beam epitaxy. Reflection high energy electron diffraction indicated antiphase domain free growth. The x-ray diffraction rocking curve demonstrated a full width at half maximum as narrow as 198 arcsec, which is the narrowest linewidth reported to date for a ZnSe/Ge heteroepitaxy. Our results indicate that ZnSe/Ge heterostructures are promising for optoelectronic device applications.
    Journal of Applied Physics 02/1994; 75(4):2026-2028. DOI:10.1063/1.356303 · 2.19 Impact Factor