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Publications (4)9.22 Total impact

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    ABSTRACT: In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.
    Applied Physics Letters 11/1990; 57(16-57):1628 - 1630. DOI:10.1063/1.104069 · 3.52 Impact Factor
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    ABSTRACT: Shallow silicided p<sup>+</sup>/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive‐in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO 2 /TiSi 2 interface is identified for the first time in the form of B 2 O 3 . p<sup>+</sup>/n diodes and short‐channel metal‐oxide‐semiconductor field‐effect transistors with good electrical characteristics have been fabricated using doped silicide technology.
    Applied Physics Letters 05/1989; 54(17-54):1684 - 1686. DOI:10.1063/1.101432 · 3.52 Impact Factor
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    ABSTRACT: A SALICIDE process is described in this paper, in which ion-beam mixing is used for silicide formation, and doped silicide in conjunction with RTA drive-in are used for shallow silicided junction formation. Fundamental issues related to this process have been investigated, including (i) effects of ion-beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiNxOy TiSi2 contact barrier formation and phase transformation; (iii) the mechanism of impurity rediWstrbution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.
    MRS Online Proceeding Library 12/1988; 146. DOI:10.1557/PROC-146-249
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    ABSTRACT: We have developed a technique for the fabrication of shallow, silicided n<sup>+</sup>-p and p<sup>+</sup>-n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion‐beam mixing with Si ions and low‐temperature annealing, and the subsequent drive‐in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal‐oxide‐semiconductor field‐effect transistor in a self‐aligned fashion and can have a significant impact on complementary metal‐oxide‐semiconductor devices.
    Journal of Applied Physics 07/1987; 61(11-61):5084 - 5088. DOI:10.1063/1.338333 · 2.19 Impact Factor