79th Automatic RF Techniques Group Conference Digest Spring 2012; 06/2012
European Microwave Integrated Circuits Conference (EuMIC); 10/2011
ABSTRACT: A new quasi-2-D model for laterally diffused metal-oxide-semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased p<sup>+</sup>-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a “current-driven” form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.
IEEE Transactions on Electron Devices 10/2011; · 2.32 Impact Factor
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International; 06/2011