E.M. Johnson

Publications (4)2.32 Total impact

• Conference Proceeding: The effects of material interfaces on thermal resistance values for high-power microwave transistors

  E.~M.~Johnson, P.~H.~Aaen, D.~Bridges, J.~Wood
  79th Automatic RF Techniques Group Conference Digest Spring 2012; 06/2012
• Conference Proceeding: Optimization of LDMOS Power Transistors for High Power Micrwoave Amplifiers using Highly Efficient Physics-Based Model

  J P Everett, M J Kearney, E M Johnson, P H Aaen, J Wood, C M Snowden
  European Microwave Integrated Circuits Conference (EuMIC); 10/2011
• Source

  Available from: ac.uk

  Article: A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

  J.P. Everett, M.J. Kearney, H. Rueda, E.M. Johnson, P.H. Aaen, J. Wood, C.M. Snowden
  [show abstract] [hide abstract]
  ABSTRACT: A new quasi-2-D model for laterally diffused metal-oxide-semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased p⁺-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a “current-driven” form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.
  IEEE Transactions on Electron Devices 10/2011; · 2.32 Impact Factor
• Conference Proceeding: Fast physical models for Si LDMOS power transistor characterization

  J P Everett, M J Kearney, H A Rueda, E M Johnson, P H Aaen, J Wood, C M Snowden
  Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International; 06/2011