Chul Lee

Korea Advanced Institute of Science and Technology , Seoul, Seoul, South Korea

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Publications (3)6.71 Total impact

  • Chul Lee · Jae-Eun Kim · Hae Yong Park · S T Kim · H Lim ·
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    ABSTRACT: We study photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Mg-doped n-GaN grown by hydride vapour-phase epitaxy. Defect-related red and blue emission bands around 1.85 eV and 2.90 eV, respectively, are observed in addition to the yellow emission band. The red and the blue emission bands are attributed to the recombinations involving the same Mg-related defects according to the result of the thermal annealing experiment. The PLE spectra of the red, the yellow, and the blue emission bands show that all of these emission bands can be interpreted in terms of a configuration coordinate (CC) diagram. The blue emission at 2.90 eV is attributed to the transition from the conduction band to the Mg-related deep acceptors. The CC diagram shows that the yellow luminescence is due to the transition from a deep donor state to a shallow acceptor state. A possible origin of the deep donor level is also discussed.
    Journal of Physics Condensed Matter 12/1998; 10(48):11103. DOI:10.1088/0953-8984/10/48/029 · 2.35 Impact Factor
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    ABSTRACT: A line‐shape analysis of room temperature photoluminescence (PL) spectra was carried out on Si‐doped GaAs samples grown by molecular beam epitaxy. The electron concentration n of the samples ranges from 1.0×10<sup>17</sup> to 4.2×10<sup>18 </sup>cm<sup>-3</sup>. It was found that the conduction band tail η c and the Fermi energy ε f measured from the conduction band minimum can be expressed as η c =2.0×10<sup>-8</sup>n<sup>1/3</sup>(eV) and ε f =-0.074+1.03×10<sup>-7</sup>n<sup>1/3</sup>(eV), respectively. The PL peak energy, at which the electron concentration per unit energy in the conduction band is maximum, can also be expressed as 1.426+2.4×10<sup>-14</sup>n<sup>2/3</sup>(eV). © 1995 American Institute of Physics.
    Journal of Applied Physics 10/1995; 78(5-78):3367 - 3370. DOI:10.1063/1.359963 · 2.18 Impact Factor
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    ABSTRACT: Room‐temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n‐doped GaAs were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conduction‐band minimum, the PR spectra revealed the band‐gap energy as well as the energy Emax at which the electron concentration per unit energy in the donor band becomes maximum, and this maximum was observed to merge in the conduction‐band at about 3×1017 cm−3 electron concentration.
    Journal of Applied Physics 06/1995; 77(12). DOI:10.1063/1.359090 · 2.18 Impact Factor

Publication Stats

49 Citations
6.71 Total Impact Points


  • 1995-1998
    • Korea Advanced Institute of Science and Technology
      • Department of Physics
      Seoul, Seoul, South Korea