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ABSTRACT: We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10<sup>9</sup> cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.
IEEE Electron Device Letters 09/2011; · 2.85 Impact Factor
