Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 04/1995; · 1.27 Impact Factor
[show abstract][hide abstract] ABSTRACT: We report the direct observation of silicon nanocrystals in unannealed siloxene using high resolution transmission electron microscopy. The microstructure consists of an amorphous matrix plus silicon crystallites with dimensions of a few nanometers. This is additional evidence that the photoluminescence of silicon‐based materials is due to quantum confinement.
Journal of Applied Physics 06/1994; · 2.21 Impact Factor
[show abstract][hide abstract] ABSTRACT: Scanning tunneling microscopy has been used to characterize the electronic structure and surface morphology of diamond films grown using the hot filament and microwave plasma chemical vapor deposition techniques. We observe a significant difference between the current‐voltage (I‐V) curves for the two types of films. The I‐V curves for the hot‐filament grown films are characterized by a well‐defined zero‐current region from which a surface band gap of 4.1 eV is measured. The I‐V curves for the microwave plasma grown films exhibit a rectifying behavior which can be modeled by surface band bending. We compare the surface density of states obtained from the I‐V curves with those obtained from x‐ray photoelectron and appearance potential spectroscopies.