J.D. Perkins

Publications (2)0 Total impact

• Conference Proceeding: Humidity-resistant high-conductivity amorphous-InZnO transparent conductors

  T. Gennett, D.T. Gillaspie, M.O. Reese, L.J. Simpson, F.J. Pern, J.D. Perkins, D.S. Ginley
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  ABSTRACT: Sputtered, amorphous mixed metal transparent conductive oxides, TCOs, are of increasing interest. The TCOs have excellent opto-electronic properties and smoothness (R_RMS < 0.5 nm) obtained for films deposited at 50-150°C. In the case of amorphous InZnO (a-InZnO) films grown from a ceramic target with 20 atomic % ZnO in In₂O₃, conductivities ¿ ¿ 2500 S/cm are common. This project specifically centers on the combined materials phase space of oxygen stoichiometry and metals composition (In:Zn ratio) and their effect on the environmental stability and water permeability of the resultant transparent films. Amorphous IZO films deposited from a fixed composition target with a range of oxygen concentrations allowed for a comparison of the relative stability of various composition and conductivity. In the initial testing within an 85/85 chamber, the more conductive a-InZnO films with >1000 S/cm, did not show any change in conductivity or transparency after 1000 hrs. In contrast a-InZnO films of comparable thickness and <0.01 S/cm while remaining transparent would improve in conductivity anywhere from 10% to over 2 orders of magnitude. These results establish the possibility that a-InZnO layers may be a viable replacement to traditional resistive and conductive ZnO layers and may find application as a transparent, non-organic barrier layer.
  Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE; 07/2009
• Conference Proceeding: Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells

  R. Sundaramoorthy, I.L. Repins, T. Gennett, F.J. Pern, D. Albin, J.V. Li, C. DeHart, S. Glynn, J.D. Perkins, D.S. Ginley, T. Gessert
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  ABSTRACT: We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of Al-doped ZnO (AZO) conducting window layer for CuInGaSe₂ (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.
  Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE; 07/2009