G. Pailloncy

Publications (4)2.11 Total impact

• Article: Large-Signal Network Analysis Including the Baseband

  G. Pailloncy, G. Avolio, M. Myslinski, Y. Rolain, M.V. Bossche, D. Schreurs
  [show abstract] [hide abstract]
  ABSTRACT: In recent years, wireless systems have rapidly evolved due to the increasing demands of different services, functionalities, and applications. In order to provide high-speed connectivity while using the available spectrum in an efficient manner, wideband digitally modulated signals are increasingly used to transmit information.
  IEEE Microwave Magazine 05/2011; · 2.11 Impact Factor
• Source

  Available from: Dominique Schreurs

  Conference Proceeding: On-Wafer LSNA measurements including dynamic-bias

  G. Avolio, G. Pailloncy, D. Schreurs, M.V. Bossche, B. Nauwelaers
  [show abstract] [hide abstract]
  ABSTRACT: A novel set-up extending Large Signal Network Analyzer (LSNA) capabilities is described in this work. The new set-up allows the simultaneous on-wafer measurement of high-frequency response (600 MHz-50 GHz) and currents/voltages induced at low-frequency scale (10 kHz-24 MHz) when the nonlinear DUT is excited by a periodic modulated signal. Experiments carried out on FinFET devices are reported. It will be shown that, in certain conditions, the contribution of low-frequency information cannot be disregarded as it causes a significant discrepancy to appear in the current/voltage at the DUT terminals.
  Microwave Conference, 2009. EuMC 2009. European; 11/2009
• Conference Proceeding: Simultaneous measurement of high and low frequency response of non-linear microwave circuits

  G. Avolio, G. Pailloncy, D. Schreurs, M.V. Bossche, B. Nauwelaers
  [show abstract] [hide abstract]
  ABSTRACT: In this work, measurements of the high frequency as well as the low frequency response of a non-linear microwave circuit are reported. The developed set-up is based on an extension of the LSNA and it enables the simultaneous measurement of baseband response and RF behaviour. Thanks to this capability a direct correlation between the variation of baseband impedance and asymmetry of distortion components around the fundamental carrier is possible. Experimental results of two-tone measurements, carried out on a hybrid GaAs microwave circuit, are shown.
  ARFTG Microwave Measurement Symposium, 2008 72nd; 01/2009
• Conference Proceeding: Complete characterisation of LF and RF dynamics at device terminals within microwave circuits

  G. Avolio, D. Schreurs, B. Nauwelaers, G. Pailloncy, M.V. Bossche
  [show abstract] [hide abstract]
  ABSTRACT: This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
  Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on; 12/2008