B. Min

Publications (2)0 Total impact

• Conference Proceeding: Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

  L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, S. Bagchi, C. Parker, J. Vasek, D. Sing, [......], G. Ablen, Z. Shi, J. Saenz, B. Min, D. Burnett, B.-Y. Nguyen, J. Mogab, M.M. Chowdhury, W. Zhang, J.G. Fossum
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  ABSTRACT: In this paper we demonstrate for the first time a novel CMOS IT-FET (inverted T channel FET) architecture. We demonstrate well functional ITFET SRAM bit-cells. Vertical devices such as FinFET and planar ultra thin body devices have been shown to exhibit good short channel control and proposed for future device scaling. The ITFET is novel device architecture that takes advantage of both vertical and horizontal thin-body devices. A doped channel IT-FET process has been developed and is the focus of this paper. This technology can be scaled beyond 45nm technologies using undoped channels. An ITFET device comprises of an ultra thin body planar horizontal channels and vertical channels in a single device. The devices have multi-gate control around these channels to improve short channel control. A single device has multiple orientations and hence mobility enhancement of both (110) and (100) planes can be used optimally. The devices presented have 15nm planar horizontal thin body and 40nm vertical channels of 100nm height, 17Aring gate dielectric and 50nm gate length. These devices are especially useful in circuits that need ratioing such as in SRAM cells and a well functional SRAM cell is demonstrated
  Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006
• Conference Proceeding: ITFET: Inverted T Channel FET, A Novel Device architecture and circuits based on the ITFET

  L. Mathew, M. Sadd, S. Kalpat, M. Zavala, T. Stephens, R. Mora, R. Rai, C. Parker, J. Vasek, D. Sing, [......], G. Ablen, Z. Shi, J. Saenz, B. Min, D. Burnett, B.Y. Nguyen, J. Mogab, M.M. Chowdhury, W. Zhang, J.G. Fossum
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  ABSTRACT: The ITFET is novel device architecture; it offers significant advantages over planar and FinFET technologies. The ITFET uses traditional CMOS processing technologies and can be rapidly inserted into existing SOI process flows. Doped channel ITFET devices have been demonstrated future work will include undoped channel ITFET devices. Simulated performances of the ITFET devices predict these devices can meet the 45nm and 32nm device performance. This transistor architecture offers device, process and application advantages
  Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on;