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S D Gunapala,
D Z Ting,
C J Hill, J Nguyen,
A Soibel,
S B Rafol,
S A Keo,
J M Mumolo,
M C Lee,
J K Liu,
B Yang,
A Liao
Infrared Physics & Technology 05/2011; 54(3):155-163. · 1.30 Impact Factor
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S.D. Gunapala,
S.V. Bandara,
J.K. Liu,
J.M. Mumolo,
D.Z. Ting,
C.J. Hill, J. Nguyen,
B. Simolon,
J. Woolaway,
S.C. Wang,
Weiping Li,
P.D. LeVan,
M.Z. Tidrow
[show abstract]
[hide abstract]
ABSTRACT: Quantum well infrared photodetectors (QWIPs) are well known for their stability, high pixel-pixel uniformity and high pixel operability which are quintessential parameters for large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the midwave infrared (MWIR) band extends from 4.4-5.1 ¿m and FWHM of the long-wave infrared (LWIR) band extends from 7.8-8.8 ¿m. Dual-band QWIP detector arrays were hybridized with direct injection 30 ¿m pixel pitch megapixel dual-band simultaneously readable CMOS read out integrated circuits using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 68 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NE¿T of 27 and 40 mK for MWIR and LWIR bands, respectively.
IEEE Journal of Quantum Electronics 03/2010; · 1.88 Impact Factor
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S D Gunapala,
D Z Ting,
C J Hill, J Nguyen,
A Soibel,
S B Rafol,
S A Keo,
J M Mumolo,
M C Lee,
J K Liu,
B Yang
IEEE Photonics Technology Letters 01/2010; 22(24):1856-1858. · 2.19 Impact Factor
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[show abstract]
[hide abstract]
ABSTRACT: Superlattice (SL) photodetectors operating with a cutoff wavelength of lambda = 10 mum are demonstrated to respond up to a temperature of T = 140 K with a nonunity gain enabling a high responsivity of Rfr = 25 A/W. The improvement in detector performance is achieved by the optimisation of SL heterodiode design in which suppression of dark current is realised without significant impact on the photocurrent.
Electronics Letters 11/2009; · 0.96 Impact Factor
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Electronics Letters 01/2009; 45(21):1089-U65. · 0.96 Impact Factor
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S.D. Gunapala,
S.V. Bandara,
J.K. Liu,
J.M. Mumolo,
D.Z. Ting,
C.J. Hill, J. Nguyen,
B. Simolon,
J. Woolaway,
S.C. Wang,
W. Li,
P.D. LeVan,
M.Z. Tidrow
[show abstract]
[hide abstract]
ABSTRACT: This paper reports the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band quantum well infrared photodetector (QWIP) focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 to 5.1 μm and the FWHM of a long-wave infrared (LWIR) band extends from 7.8 to 8.8 μm. Dual-band QWIP detector arrays were hybridized with custom fabricated direct injection read out integrated circuits (ROICs) using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 70 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NEΔT of 27 and 40 mK for MWIR and LWIR bands, respectively.
Infrared Physics & Technology 52(6):395-398. · 1.30 Impact Factor
