Publications (2)7.69 Total impact
-
Article: Epitaxial silicon and germanium on buried insulator heterostructures and devices
[show abstract] [hide abstract]
ABSTRACT: Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (≪10 nm ), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers. © 2003 American Institute of Physics.Applied Physics Letters 01/2004; · 3.84 Impact Factor -
Article: Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)
[show abstract] [hide abstract]
ABSTRACT: We have characterized the structure and electrical properties of lanthanum silicate layers formed on Si(001) by reaction of lanthanum oxide with the substrate. Postoxidation of the deposited films results in the formation of a stacked dielectric with a lanthanum silicate layer atop an interfacial layer of SiO2. This structure combines the interfacial properties of SiO2 with the large permittivity of lanthanum silicate. Although the resulting film has leakage properties far superior to an equivalent thickness of SiO2, there is evidence of significant quantities of ionic charge that must be eliminated before use in electronic applications. © 2001 American Institute of Physics.Applied Physics Letters 03/2001; 78(11):1607-1609. · 3.84 Impact Factor
