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Publications (5)8.22 Total impact

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    ABSTRACT: Vertical n-channel tunnel field-effect transistors (TFETs) with tunneling normal to the gate based on an $\hbox{n}^{+}\ \hbox{In}_{x = 0.53 - >1}\hbox{GaAs}/\hbox{p}^{+}$ InP heterojunction have been demonstrated to exhibit simultaneously a high $I_{\rm ON}/I_{\rm OFF}$ ratio of $\hbox{6} \times \hbox{10}^{5}$, a minimum subthreshold swing $(SS)$ of 93 mV/dec, and an on-current of 20 $\mu\hbox{A}/\mu\hbox{m}$ at $V_{\rm DS} = \hbox{0.5}\ \hbox{V}$ and a gate swing of 1.75 V at 300 K, a record TFET performance. The significant improvement in device performance is ascribed to the adoption of a thin equivalent oxide thickness (EOT) of $\sim$ 1.3 nm for improved electrostatics and the use of plasma-enhanced chemical vapor deposition $\hbox{SiN}_{x}$ mesa passivation to preserve the integrity of the thin exposed semiconductor layers.
    IEEE Electron Device Letters 06/2012; 33(6):782-784. DOI:10.1109/LED.2012.2189546 · 3.02 Impact Factor
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    ABSTRACT: Vertical n-channel tunnel field-effect transistors (FETs) based on compound semiconductors, in a new geometry with tunneling normal to the gate, are demonstrated for the first time using an n<sup>+</sup> In<sub>0.53</sub>Ga<sub>0.47</sub>As/n<sup>+</sup> /n<sup>+</sup>,=0.53- >;1 GaAs/p<sup>+</sup> InP heterojunction. At 300 K, the TFETs show an on-current of ~20 μA/μm and a minimum subthreshold swing (SS) of 130 mV/dec using an Al<sub>2</sub>O<sub>3</sub> gate dielectric (EOT ~3.4 nm). Postdeposition annealing of the gate dielectric improves SS, and device passivation using atomic layer deposition can effectively prevent degradation of drain current over time. The clear negative differential resistance (NDR) observed in the tunnel junction and the trend toward NDR in the TFETs confirm that the transport mechanism in these FETs is interband tunneling.
    IEEE Electron Device Letters 12/2011; 32(11-32):1516 - 1518. DOI:10.1109/LED.2011.2164232 · 3.02 Impact Factor
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    ABSTRACT: Heavily-doped In0.53Ga0.47As tunnel junctions is prepared using molecular beam epitaxy (MBE). Secondary ion mass spectroscopy (SIMS) is used to measure the dopant profiles, these profiles are used to simulate the expected energy band diagrams, and current-voltage characteristics (I-V) are used to characterize the junctions. Devices were fabricated using a self-aligned process to minimize access resistance. Extraction of series resistance from I-V measurements of fabricated tunnel diodes show that the resistance is primarily due to contact resistance (1-2�?10-6 ¿cm2). The lowest doped junction shows good agreement with the predicted values, however the current does not increase with field as expected. This may indicate that the dopant activation is not efficient at higher densities. Room temperature negative differential region (NDR) is not observed in the tunnel diode with the highest effective dopant density, but measurements at 4.2 K show NDR.
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    ABSTRACT: In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-mum wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dBmiddotOmega. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC
    IEEE Photonics Technology Letters 07/2006; 18(12-18):1323 - 1325. DOI:10.1109/LPT.2006.876733 · 2.18 Impact Factor
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    ABSTRACT: By optimizing the MBE growth condition for the InGaAs layer on InP substrate, ultra-low InGaAs background concentration has been achieved. Hall measurements at room temperature show background concentration level of less than 3e14 cm<sup>-3</sup>, with mobility as high as 12,300 cm<sup>2</sup>/V·s. While, C-V measurements show background concentration has decreased to 1e14 cm<sup>-3</sup> level with PlN photodetector epi structure. Commercial InGaAs PIN devices at 2 V reverse bias operation with an average 3 dB bandwidth of 4.6 GHz have been successfully fabricated from these MBE materials. For a 75 μm diameter device, room temperature dark current of 0.5 nA, and 1550 nm photo responsivity of 0.95 A/W were measured.
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on; 06/2004