Publications (4)8.13 Total impact
-
Article: Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals
[show abstract] [hide abstract]
ABSTRACT: Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen–hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p , N 1s , and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si <sub>3</sub> N <sub>4</sub> film is covered with one monolayer of Si –( OH )<sub>3</sub> N . Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si <sub>3</sub> N <sub>4</sub>/ Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si–H bonds at the Si <sub>3</sub> N <sub>4</sub>/ Si (110) interface is 38%–53% larger than those at the Si <sub>3</sub> N <sub>4</sub>/ Si (100) and Si <sub>3</sub> N <sub>4</sub>/ Si (111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.Journal of Applied Physics 01/2009; · 2.17 Impact Factor -
Article: Subnitride and valence band offset at Si3N4/Si interface formed using nitrogen-hydrogen radicals
[show abstract] [hide abstract]
ABSTRACT: The authors measured soft x-ray-excited angle-resolved photoemission from Si 2p , N 1s , and O 1s core levels, and valence band for nitride films formed on Si(100), Si(111), and Si(110) using nitrogen-hydrogen radicals with the same probing depth. The Si <sub>3</sub> N <sub>4</sub>/ Si interfaces formed exhibited an almost abrupt compositional transition. Furthermore, the crystal orientation of Si substrate affects the total areal density of subnitrides but not the valence band offset at the Si <sub>3</sub> N <sub>4</sub>/ Si interface.Applied Physics Letters 04/2007; · 3.84 Impact Factor -
Article: Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
Japanese Journal of Applied Physics 01/2007; · 1.06 Impact Factor -
Article: Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
Japanese Journal of Applied Physics 01/2005; 44(10):7395-7399. · 1.06 Impact Factor
