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ABSTRACT: This paper addresses the generation of behavioral models of digital integrated circuits (ICs) for signal and power integrity simulations. The proposed models are obtained by external measurements carried out at the device ports only and by the combined application of specialized state-of-the-art modeling techniques. The present approach exploits a behavioral formulation, leading to models reproducing all the behavior of the IC ports as the input/output buffers and the core power delivery network. The modeling procedure is demonstrated for a commercial nor Flash memory in 90-nm technology housed by a specifically designed test fixture.
IEEE Transactions on Instrumentation and Measurement 11/2011; · 1.21 Impact Factor
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ABSTRACT: The growing importance of signal integrity (SI) analysis in integrated circuits (ICs), revealed by modern system-in-package methods, is demanding for new models for the IC sub-systems which are both accurate, efficient and extractable by simple measurement procedures. This paper presents the contribution for the establishment of an integrated IC modeling approach whose performance is assessed by direct comparison with the signals measured in laboratory of two distinct memory IC devices. Based on the identification of the main blocks of a typical IC device, the modeling approach consists of a network of system-level sub-models, some of which with already demonstrated accuracy, which simulated the IC interfacing behavior. Emphasis is given to the procedures that were developed to validate by means of laboratory measurements (and not by comparison with circuit-level simulations) the model performance, which is a novel and important aspect that should be considered in the design of IC models that are useful for SI analysis.
IEEE Transactions on Components, Packaging, and Manufacturing Technology 09/2011; · 0.98 Impact Factor
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ABSTRACT: This paper proves that the traditional way of deriving power amplifier low-pass equivalent complex-signal Volterra models from their original band-pass RF real-signal Volterra models is too restrictive, and so does not lead to an optimal model. Then, it proposes a much richer alternative approach. Instead of deriving the base-band Volterra model from the RF Volterra model, we started by a general Volterra series expansion of a complex-signal to only then impose the restrictions of odd parity required by the low-pass equivalent polynomial approximation. This way, not only we prove that the theoretical reticence that was raised to similar approaches previously proposed for the memoryless polynomial and the memory polynomial were unfounded, as experimental results fully justified this novel approach.
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International; 07/2009
