N. Awaya

Publications (2)0 Total impact

• Conference Proceeding: CoOx-RRAM memory cell technology using recess structure for 128Kbits memory array

  S. Kawabata, M. Nakura, S. Yamazaki, T. Shibuya, Y. Inoue, J. Onishi, Y. Tabuchi, Y. Tamai, Y. Yaoi, K. Ishihara, [......], N. Fukuda, H. Kurihara, Y. Yoshida, Y. Kokaze, Y. Nishioka, K. Suu, K. Nakayama, A. Kitagawa, S. Ohnishi, N. Awaya
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  ABSTRACT: This paper presents the process integration and device technology for the Resistance RAM(RRAM) memory array using a CoOx film and a recess structure as a resistor, which is capable of low voltage, high speed and low current operation. The resistance of the CoOx film and its uniformity are strongly dependent on the film quality, which is optimized by controlling the O₂ gas flow rate during the film deposition. We demonstrate the basic write and read operation of the 128Kbits memory array by developing the novel process integration technology and optimizing the test algorism.
  Memory Workshop (IMW), 2010 IEEE International; 06/2010
• Source

  Available from: go.jp

  Conference Proceeding: High Speed Unipolar Switching Resistance RAM (RRAM) Technology

  Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, Y. Tokura
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  ABSTRACT: We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds. This enables high speed and high density cross-point RRAM memory arrays. In addition, we demonstrate how switching characteristics can be controlled by a series resistor
  Electron Devices Meeting, 2006. IEDM '06. International; 01/2007