-
IEEE Transaction on Electron Devices. 01/2012; 59(2):433-440.
-
IEEE Transaction on Electron Devices. 01/2012; 59(12).
-
japlph. 01/2012; 111(7):074318 (9pp).
-
japlph. 01/2012; 111(9):093512 (6pp).
-
[show abstract]
[hide abstract]
ABSTRACT: The electronic properties of graphene nanoribbons (GNRs) in the presence of line-edge roughness scattering are studied. The mobility, conductivity, mean free path, and localization length of carriers are analytically derived using an effective mass model for the band structure. This model provides a deep insight into the operation of armchair GNR devices in the presence of line-edge roughness. The effects of geometrical and roughness parameters on the electronic properties of GNRs are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons and its dependences on the geometrical and roughness parameters are analytically studied. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in GNR devices.
IEEE Transactions on Electron Devices 12/2011; · 2.32 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: The electronic properties of graphene nano-ribbons in the presence of line-edge roughness scattering are studied. The conductance, the mean free path, and the localization length of carriers are analytically derived using an effective mass model for the band structure. The model developed provides a deep insight into the operation of graphene nanoribbon devices in the presence of line-edge roughness. The effects of geometrical parameters on the conductance of graphene nanoribbons are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons is studied analytically. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in graphene nanoribbon devices.
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on; 05/2011
-
IEEE Transaction on Electron Devices. 01/2011; 58(11):3725-3735.
-
[show abstract]
[hide abstract]
ABSTRACT: In this work a comprehensive study of the effect of line-edge roughness on the electronic properties of graphene nanoribbons is presented. The effect of roughness parameters and the role of device geometry is discussed. Depending on these parameters, carrier transport can be in the quasi ballistic, diffusive, or localization regime. Our results show the transport gap of nanoribbons can increase due to the presence of line-edge roughness.
Computational Electronics (IWCE), 2010 14th International Workshop on; 11/2010
-
International Symposium on Graphene Devices: Technology, Physics, and Modeling; 01/2008
