M. Dontabactouny

Publications (3)4.81 Total impact

• Source

  Available from: pagesperso-orange.fr

  Article: Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

  D. Zhou, R. Piron, M. Dontabactouny, E. Homeyer, O. Dehaese, T. Batte, M. Gicquel, F. Grillot, K. Tavernier, J. Even, S. Loualiche
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  ABSTRACT: InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  physica status solidi (c) 09/2009; 6(10):2217 - 2221.
• Source

  Available from: pagesperso-orange.fr

  Article: Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

  D. Zhou, R. Piron, M. Dontabactouny, O. Dehaese, F. Grillot, T. Batte, K. Tavernier, J. Even, S. Loualiche
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  ABSTRACT: We report on the uniformity improvement of InAs quantum dashes (QDHs) grown by molecular beam epitaxy on InP (100) through optimizing double cap technique. Broad-area lasers were fabricated with an emission wavelength of 1.58 μ m . A threshold current density of 360 A / cm ² was achieved for a five stack QDH structure and a cavity length of 1.2 mm. This results from a reduced inhomogeneous broadening (62 meV) and lower internal optical losses (7 cm ^-1) . The achievement paves the way toward ultralow threshold semiconductor laser for telecommunications.
  Applied Physics Letters 03/2009; · 3.84 Impact Factor
• Source

  Available from: pagesperso-orange.fr

  Article: Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

  D. Zhou, R. Piron, M. Dontabactouny, O. Dehaese, F. Grillot, T. Batte, K. Tavernier, J. Even, S. Loualiche
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  ABSTRACT: Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm² (~45 A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52 K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.
  Electronics Letters 02/2009; · 0.96 Impact Factor