H. Park, H.-B. Lee,
H.-K. Jung,
Z.-S. Choi,
J.-Y. Bae,
J.-W. Hong,
K.-I. Choi,
B.-L. Park,
E.-J. Lee,
J.-W. Kim,
J.-M. Lee,
G.-H. Choi,
J.-T. Moon
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ABSTRACT: Voltage ramp dielectric breakdown (VRBD) and time-dependent dielectric breakdown (TDDB) characteristics of ~40nm-wide Cu/SiO 2 interconnect dielectrics were investigated. The addition of a SiH 4 treatment before capping SiN deposition led to more uniform breakdown fields, and better TDDB performance. The integration of a Ti-based barrier resulted in the best uniformity of breakdown fields, and a dramatic enhancement of TDDB reliability. The relationship between the VRBD and the TDDB characteristics was discussed, and the effect of SiH 4 treatment was analyzed using TEM.
Interconnect Technology Conference, 2008. IITC 2008. International; 07/2008