[Show abstract][Hide abstract] ABSTRACT: The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physics-based model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small- and large-signal microwave characteristics, and the physical insight gained, can be used in the process-orientated optimization and process sensitivity analysis of LDMOS power FETs. The charge-based model is well-suited to non-linear CAD implementation for applications such as power amplifier design.
[Show abstract][Hide abstract] ABSTRACT: A new quasi-2-D model for laterally diffused metal-oxide-semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased p<sup>+</sup>-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a “current-driven” form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.
IEEE Transactions on Electron Devices 09/2011; 58(9):3081-3088. DOI:10.1109/TED.2011.2160546 · 2.47 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: form only given, as follows. A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.
IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium 01/2011; DOI:10.1109/MWSYM.2011.5973484