-
Journal of Applied Physics 01/2011; 109. · 2.17 Impact Factor
-
M.A. Green,
G. Conibeer,
D. König,
S. Shrestha,
Shujuan Huang,
P. Aliberti,
L. Treiber,
R. Patterson,
B.P. Veettil,
A. Hsieh, [......],
E. Antolin,
D.F. Marrón,
C. Tablero,
E. Hernández,
J.-F. Guillemoles,
L. Huang,
A. Le Bris,
T. Schmidt,
R. Clady,
M. Tayebjee
[show abstract]
[hide abstract]
ABSTRACT: The limiting efficiency on the conversion efficiency of terrestrial global sunlight is not circa 31%, as commonly assumed, but 74%. To reach the lowest possible costs and hence to attain its intrinsic potential as a major source of future sustainable energy supplies, it would appear photovoltaics has to evolve to devices targeting the latter efficiency rather than the former. The hot carrier solar cell, although presenting substantial device challenges, is arguably the highest efficiency photovoltaic device concept yet suggested and hence worthy of efforts to investigate its practicality. Challenges in the implementation of hot carrier cells are identified and progress in overcoming these are discussed.
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE; 07/2010
-
[show abstract]
[hide abstract]
ABSTRACT: The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10<sup>20</sup>–10<sup>21</sup> cm <sup>-3</sup> concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
Applied Physics Letters 02/2009; · 3.84 Impact Factor
