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M. Bareiss,
B.N. Tiwari,
A. Hochmeister,
G. Jegert,
U. Zschieschang,
H. Klauk,
B. Fabel,
G. Scarpa,
G. Koblmuller,
G.H. Bernstein,
W. Porod, P. Lugli
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ABSTRACT: Infrared (IR) detectors have been fabricated consisting of antenna-coupled metal-oxide-metal diodes (ACMOMDs). These detectors were defined using electron beam lithography with shadow evaporation metal deposition. They are designed to be sensitive to the IR range and work at room temperature without cooling or biasing. In order to achieve large arrays of ACMOMDs, nanotransfer printing have been used to cover a large area with metal-oxide-metal (MOM) diodes and with antenna structures. The printed antenna structures consist of gold and aluminum and exhibit a low electrical resistivity. A large area array of MOM tunneling diodes with an ultrathin dielectric ( ~ 3.6-nm aluminum oxide) has also been fabricated via the transfer-printing process. The MOM diodes exhibit excellent tunneling characteristics. Both direct and Fowler-Nordheim tunneling has been observed over eight orders of magnitude in current density. Static device parameters have been extracted via kinetic Monte Carlo simulations and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes. The mechanical yield of the transfer-printing process for the MOM tunneling diodes is almost a 100%, confirming that transfer printing is suitable for large area effective fabrication of these quantum devices.
IEEE Transactions on Microwave Theory and Techniques 11/2011; · 1.85 Impact Factor
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ABSTRACT: Leakage currents in TiN/high-κ-ZrO<sub>2</sub>/TiN capacitors were simulated by using a novel kinetic Monte Carlo algorithm specially designed to describe tunneling transport of charge carriers in high-κ dielectrics, including defect-assisted transport mechanisms. Comparing simulation results with experimental data, a model for electronic transport was established and validated. Transport was found to be dominated by Poole-Frenkel emission from positively charged bulk trap states at medium voltages and trap-assisted tunneling at high voltages. Information on the conduction band offset at the TiN/ZrO<sub>2</sub> interface as well as on the trap depth was extracted. The model accurately describes the scaling of the leakage current with temperature and with thickness of the dielectric film, and it provides insight into the mutual interdependence of the competing transport mechanisms.
IEEE Transactions on Electron Devices 03/2011; · 2.32 Impact Factor
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ABSTRACT: Integrated nanoantennas for sensorics and communications on the basis of CMOS circuits, MIM tunnel diodes, and carbon based nanoelectronics as well as methods for modeling of wireless interchip links are discussed. Experimental validation of the modeling methods is presented.
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on; 02/2011
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ABSTRACT: A theoretical analysis based on a drift-diffusion simulation method is performed for investigating device performances of nanostructured organic solar cells. The results show an increase of the short-circuit current density, which can be attributed to the increased interface area. Patterning via nanoimprint techniques is demonstrated, which constitutes the first step towards the realization of bulk-heterojunction organic solar cells with controlled morphology.
Journal of Physics Conference Series 11/2009; 193(1):012115.
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ABSTRACT: We investigated visible and UV light response of OTFTs based on the solution processable poly(3-hexylthiophene) (P3HT) semiconducting polymer. The transistors show a photoresponse in channel current under white and UV light illumination. Stabilization time after illumination and recovery time after turning off the light sources are also studied. A transport analysis based on a modified drift-diffusion model is presented.
Journal of Physics Conference Series 11/2009; 193(1):012114.
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ABSTRACT: In order to fully exploit the potential of polymer electronics, large-area/low-cost processing technologies are necessary. In this paper, we investigate the feasibility of air atomizing spray technology for large-area/low-cost fabrication of organic electronic and optoelectronic thin-film devices based on solution-processable polythiophene derivatives. For this purpose an airbrush coating system was implemented and two main classes of organic devices were fabricated, organic photodetectors (OPD) and organic thin-film transistors (OTFT). Electrical and electro-optical characteristics, as well as film morphology and roughness of spray coated devices were compared to those of spin coated ones fabricated with similar structure. Although films deposited by spray coating show a considerably higher surface roughness and lower overall homogeneity, the spray-coated devices are capable of achieving performances comparable to the spin-coated ones.
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on; 07/2009
