S. L. Feng

Publications (3)8.65 Total impact

• Article: High performance external cavity InAs/InP quantum dot lasers

  P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, S. L. Feng, C. H. Ma, H. L. Wang
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  ABSTRACT: We report on high performance InAs/InP quantum dot tunable external cavity lasers (ECLs) operating in continuous-wave mode at room temperature. A tuning range of 70 nm has been achieved, covering the wavelengths from 1563 to 1633 nm. The threshold current densities are lower than 1625 A/cm2 in the tuning range. More than 23 mW output power was obtained at lasing wavelength of 1594 nm with an external differential quantum efficiency of 10.3%. An even wider tuning range of 98 nm has been obtained from the ECL based on the QD laser lasing in a longer wavelength.
  Applied Physics Letters 03/2011; 98(12):121102-121102-3. · 3.84 Impact Factor
• Article: InAs/InP(100) quantum dot laser with high wavelength stability

  S.G. Li, Q. Gong, Y.F. Lao, Y.G. Zhang, S.L. Feng, H.L. Wang
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  ABSTRACT: InAs/InP(100) quantum dot lasers with lasing wavelength insensitive to operation temperature are demonstrated. Very high wavelength stability of 0.088 nm/K in the temperature range 80-310 K is obtained, which is 6.2 times lower than that of the reference quantum well laser.
  Electronics Letters 02/2010; · 0.96 Impact Factor
• Article: Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

  S. G. Li, Q. Gong, Y. F. Lao, K. He, J. Li, Y. G. Zhang, S. L. Feng, H. L. Wang
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  ABSTRACT: We report on the InAs quantum dots (QDs) laser in the 1.55 μ m wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70 ° C , with characteristic temperature of 69 K . High internal quantum efficiency (56%) and low infinite length threshold current density ( 128 A / cm ² per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605 μ m can be covered by varying the laser cavity length.
  Applied Physics Letters 10/2008; · 3.84 Impact Factor