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ABSTRACT: Large threshold voltage shifts are observed in n-type integrated VDMOS transistors upon hot carrier stress. The effect is enhanced by the total internal temperature (ambient temperature + temperature increase due to power dissipation) of the device as well as by the gate oxide electric field. A model is presented and is used to extract the safe operating area (SOA) of the transistors. This is especially important as smart power technologies are often used in high temperature environments (up to 150-175degC), e.g. in automotive
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on; 07/2006
