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ABSTRACT: Plasma enhanced deposition of silicon nitride films is shown to have less N–H bonds and provide better heat resistance using SiH 4 –N 2 than SiH 4 –NH 3 –N 2 plasmas at 100 °C. Properties of silicon nitride using SiH 4 –N 2 plasma are studied versus various deposition parameters such as radio frequency power, silane flow ratio, and deposition pressure. The experimental data indicate that the deposition process at 100 °C has a N 2 ‐reaction‐controlled mechanism.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 06/1992; · 1.34 Impact Factor
