Yingpin Chen

Publications (2)3.07 Total impact

• Article: Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

  LiWei Shang, ZhuoYu Ji, YingPin Chen, Hong Wang, Xin Liu, MaiXin Han, Ming Liu
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  ABSTRACT: Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors, inverters, and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range, the threshold voltage is 0.3 V, and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at −5 V supply voltage, and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators. KeywordsOFET–low voltage–atomic layer deposition–Al2O3 thin film–high-k dielectric
  Science China Technological Sciences 04/2012; 54(1):95-98. · 0.75 Impact Factor
• Article: Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors

  Liwei Shang, Zhuoyu Ji, Hong Wang, Yingpin Chen, Congyan Lu, Xin Liu, Maixing Han, Ming Liu
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  ABSTRACT: There are two critical issues involved in voltages of organic thin-film transistors (OTFTs), i.e., high operating voltages V_op and random distributed threshold voltages V_TH, which lead to high power consumption and unreliable logic function in organic integrated circuits, respectively. This paper demonstrates that both issues can be solved in a single OTFT device by using very thin insulator films. The operating voltages could be reduced to be less than 3 V, without lowering the mobility and the on/off ratio. Using light-enhanced bias stress effect, the threshold voltages can be tuned into the range of -4 to 4 V in OTFTs with SiO₂ or Al₂O₃ as dielectric films, demonstrating that light-enhanced bias stress effect in OTFTs is independent of the dielectric material. The ΔV_TH/V_op ratio is about 3, which is one of the largest threshold-voltage-shifting ratios. It is found that the threshold voltage shifting has a linear relationship with the bias voltage and the light illumination time. This tuning technology is a post fabrication and noninvasive method with negligible influence on the mobility and on/off current ratios.
  IEEE Transactions on Electron Devices 08/2011; · 2.32 Impact Factor