S.M. Amoroso,
A. Mauri,
N. Galbiati,
C. Scozzari,
E. Mascellino,
E. Camozzi,
A. Rangoni, T. Ghilardi,
A. Grossi,
P. Tessariol,
C.M. Compagnoni,
A. Maconi,
A.L. Lacaita,
A.S. Spinelli,
G. Ghidini
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ABSTRACT: In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al<sub>2</sub>O<sub>3</sub> trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, comparing experimental and modeling results for trap parameters extraction. For TANOS devices, Al<sub>2</sub>O<sub>3</sub> charge storage modifies program and erase saturation level particularly when higher Al<sub>2</sub>O<sub>3</sub> thikness are considered. Threshold instability in early steps for endurance and retarded behavior for retention can be also ascribed to the Al<sub>2</sub>O<sub>3</sub> trapping. Moreover, Al<sub>2</sub>O<sub>3</sub> layer has been shown to provide the main leakage path for bottom oxides thickness in the 4.5 nm or above range.
Reliability Physics Symposium (IRPS), 2010 IEEE International; 06/2010
