V. Temple

Publications (2)0 Total impact

• Conference Proceeding: Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

  H. O'Brien, A. Ogunniyi, C.J. Scozzie, W. Shaheen, A. Agarwal, V. Temple
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  ABSTRACT: Silicon carbide Super-GTOs are being pursued by the Army as a replacement for current silicon-based, high-power pulse switches. In this study, 0.5 cm² silicon carbide SGTOs were evaluated in an RLC pulse circuit which provided a half-sine shaped pulse at a width of 1 ms. The parameters assessed were peak current capability, 1000-shot reliability, and current sharing between parallel switches. SGTOs were pulsed as high as 1600 A, but 1250 A was found to be the most reliable and repeatable current level for most devices. This current waveform corresponds to an action of 850 A²s and a current density over the emitter area of 3.5 kA/cm². SGTOs were pulsed for over 1000 single shots without any significant change in forward voltage drop. A pair of parallel SGTOs was pulsed up to a total of 2600 A, and repeatedly at 2500 A, with current sharing within ± 1%. This paper details the evaluations of individual and paralleled devices which are being studied in preparation for future work with multi-chip modules.
  Pulsed Power Conference, 2009. PPC '09. IEEE; 08/2009
• Conference Proceeding: 9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

  A. Agarwal, C. Capell, Q. Zhang, J. Richmond, R. Callanan, M. O'Loughlin, A. Burk, J. Melcher, J. Palmour, V. Temple, H. O'Brien, C.J. Scozzie
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  ABSTRACT: Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to the unique material properties. With the continuing improvement in both material quality (defect density and carrier lifetime) and SiC device fabrication process, SiC power devices are increasingly fabricated with higher blocking rating and larger die size. This paper describes the benefits of using SiC Gate Turn-Off thyristors (GTO) in power electronics, especially for pulse power applications, reviews the development history and the current state of the art, and outlines the future perspective for developing large area GTOs with high blocking voltage of > 10 kV. Experimental results for the state-of-the-art 9 kV, 1 cm² SiC GTOs are presented. Static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm²) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm² indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The turn-on delay is found to be a strong function of the gate current, cathode-anode current and voltage. A peak current of 12.8 kA conducted with a pulse width of 17.4 ¿s indicating the superiority of the SiC GTOs for pulse power applications.
  Pulsed Power Conference, 2009. PPC '09. IEEE; 08/2009