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ABSTRACT: This paper describes a new approach to the realization of reconfigurable CMOS-compatible RF inductors using programmable vias made from phase-change (PC) materials. Reversible reconfiguration of a custom-fabricated inductor prototype is demonstrated using voltage pulses to transform (by Joule heating) the PC switch between crystalline (ON) and amorphous (OFF) states. The RF performance shows an inductance of 1.9 (0.9) nH at 2 (5) GHz with quality factor (Q) of 12.4 (5.8) in the OFF (ON) state.
Electron Devices Meeting (IEDM), 2010 IEEE International; 01/2011
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ABSTRACT: A GeTe reconfigurable phase change switch for radio frequency applications is presented. Low ON state resistance (180 Ω) and large dynamic range (7×103 X) were achieved through low resistance electrode design and high current. A partial crystallization and partial reamorphization model is proposed to explain the differences between the measured and calculated device ON (set) and OFF (reset) state resistances, respectively. The dependency between ON state resistance and reset current was estimated using a first order thermal design in steady state which suggests lower reset current by choosing materials of lower melting temperature and structures with better thermal isolation.
Applied Physics Letters 11/2010; 97(18):183506-183506-3. · 3.84 Impact Factor
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Hsinyi Lo,
Engkeong Chua,
Jian Cheng Huang,
Chun Chia Tan,
Cheng-Yuan Wen,
Rong Zhao,
Luping Shi,
Chong Tow Chong,
J. Paramesh,
T.E. Schlesinger, J.A. Bain
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ABSTRACT: We present the realization of a novel three-terminal electronic switch using phase-change (PC) chalcogenide material. This device subdivides a single PC switch into a parallel array of three-terminal subvias which are addressed with atomic-force-microscopy cantilever probes. This subdivision reduces the required switching current to acceptable levels. Vias of Ge<sub>50</sub>Sb<sub>50</sub> are demonstrated in this switch topology and are switched between high- and low-resistance states. The vias show an off/on resistance ratio of approximately 100Ã, which can be applied in radio-frequency switching applications. This dynamic range is 10Ã less than that observed in sheet films of this material, with the main loss being a reduction in resistivity between the sheet-film off-state and the device off-state. The device off -state resistivity is similar in the as-fabricated state and the reamorphized state.
IEEE Transactions on Electron Devices 02/2010; · 2.32 Impact Factor
