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ABSTRACT: Submicron metallic lateral spin valves are fabricated with AlO <sub>x</sub> tunnel junctions as spin injection and detection barriers. The spin polarization is estimated to be ∼20% , determined by both Hanle effect and variations of device dimensions. The polarization is maintained at a large dc injection current density ≫2×10<sup>6</sup> A / cm <sup>2</sup> . Both the spin polarization and spin diffusion length are weakly temperature dependent.
Applied Physics Letters 08/2009; · 3.84 Impact Factor
