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Publications (3)2.11 Total impact

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    ABSTRACT: Mechanical position is used to control the wavelength of light emission of semiconductor heterostructures. The heterostructures are coupled across a gap that varies with position to tune electron states in much the same manner that optical cavities can be coupled across a tunable reflectivity mirror to control photon states. In the experiments, a Si<sub>x</sub>N/InP cantilever containing an InGaAs surface well collapses over another InGaAs quantum well. The spacing between the wells varies along the cantilever, such that the heterostructure band gap is determined by the mechanical bending of the cantilever. Photoluminescence measurements of the coupled 200° A surface wells show a wavelength shift of up to 22 nm. Associated theory shows that mechanical quantum coupling enables interband or intersubband devices with unprecedented spectral tuning ranges for gain or absorption.
    IEEE Journal of Quantum Electronics 10/2010; · 2.11 Impact Factor
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    ABSTRACT: Mechanical positioning is used to control the wavelength of light emission from semiconductor heterostructures. In our work, a Si<sub>x</sub>N/InP cantilever containing an InGaAs surface well collapses over another InGaAs quantum well. The spacing between the wells varies along the collapsed cantilever, changing the coupling between heterostructures and thus the electron states. In an essence, we are altering the bandgap by the mechanical bending of the cantilever. This is very much similar to the control of photon states by coupling optical cavities with tunable mirrors. Here we report a wavelength shift of up to 22 nm in photoluminescence measurements of two coupled 200 Aring surface wells. Associated theory shows that mechanical quantum coupling enables interband or intersubband devices with unprecedented spectral tuning ranges for gain or absorption.
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International; 07/2009
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    ABSTRACT: This work investigates the effect of the quantum well interface on the photoluminescence (PL) spectrum. The samples consist of an MBE (molecular beam epitaxy) grown InP/InGaAs heterostructure with two sets of a multiquantum well structure (MQW) and a single quantum well (SQW) symmetrically placed around a sacrificial layer. All are attached to a common anchor where the heterostructure is still in its pristine state; only the bottom heterostructure is present in the exposed well region next to the cantilevers. The transfer matrix method yields transition wavelengths for the SQW in the unprocessed buried case and exposed case. The electron states in the MQW structure form a mini band at the top of the quantum well and are not affected by the nature of the interface.
    Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on; 09/2008