M. Radosavljevic,
B. Chu-Kung,
S. Corcoran,
G. Dewey,
M.K. Hudait,
J.M. Fastenau,
J. Kavalieros,
W.K. Liu,
D. Lubyshev,
M. Metz, K. Millard,
N. Mukherjee,
W. Rachmady,
U. Shah,
R. Chau
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ABSTRACT: This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO<sub>x</sub>-2nm InP) in the In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t<sub>OXE</sub>) and low gate leakage (J<sub>G</sub>) and (ii) effective carrier confinement and high effective carrier velocity (V<sub>eff</sub>) in the QW channel. The L<sub>G</sub>=75nm In<sub>0.7</sub>Ga<sub>0.3</sub>As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750¿S/¿m and high drive current of 0.49mA/¿m at V<sub>DS</sub>=0.5V.
Electron Devices Meeting (IEDM), 2009 IEEE International; 01/2010
