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ABSTRACT: We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force microscopy (C-AFM) observation. We found that two different local conduction modes, the percolation path and Fowler-Nordheim (F-N) tunneling, contribute to dielectric breakdown. Furthermore, the operating voltage of magnetic tunnel junctions (MTJs) for maintaining reliability over ten years against dielectric breakdown was discussed.
Reliability Physics Symposium, 2009 IEEE International; 05/2009