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ABSTRACT: The dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been investigated using Secco etching and cross-sectional transmission electron microscopy (XTEM). The relationship between the breakdown voltage of the buried oxide layer and the oxygen dose has also been studied. The dislocation density decreases as the dose decreases and the wafer temperature, during implantation, increases. The SIMOX wafer implanted at 180 keV with a low dose of 0.4 × 1018 cm−2 at 550°C and subsequently annealed at temperatures higher than 1300°C has an extremely low dislocation density on the order of 102 cm−2. The buried oxide layer of this SIMOX wafer has a breakdown voltage of 40 V.
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 04/1991; 55(1-4-55):847-851. DOI:10.1016/0168-583X(91)96291-R · 1.12 Impact Factor