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ABSTRACT: Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not suitable for modern portable devices which demand lesser power consumption. Therefore, we proposed a new Double-Pole Four-Throw (DP4T) switch by using RF CMOS technology and analyzed its performance. Further, main objective is to provide a plurality of such switches arranged in a densely con¯gured switch array, where the power and area could be reduced as compared to already existing switch con¯guration as SPDT and Double-Pole Double-Throw (DPDT) transceiver switches, which is simply a reduction of signal strength during transmission of the RF signals. The presented result for the proposed DP4T switch reveals the peak output currents (drain current) around 0.116À0.387 mA and a switching speed of 19À36 ps.
Journal of Circuits, Systems, and Computers. 06/2012; 21(4):1-18.
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ABSTRACT: In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole four-throw circuit by using
independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic
density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have
demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band
capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive
circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is
to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation,
and better isolation with fast switching speed.
Keywords45-nm technology–Double-gate MOSFET–DP4T switch–Radio frequency–RF switch–Attenuation–CMOS switch–VLSI
Journal of Computational Electronics 04/2012; 10(1):229-240. · 1.21 Impact Factor
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ABSTRACT: Keywords: Cylindrical surrounding double-gate (CSDG) MOSFET Double-gate (DG) MOSFET Resistive and capacitive MOSFET model Advanced design simulator (ADS) Radio frequency RF switch CMOS switch Cross talk VLSI a b s t r a c t In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET.
Microelectronics Journal 08/2011; 42:1124-1135. · 0.92 Impact Factor
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ABSTRACT: In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.
Communication Systems and Network Technologies (CSNT), 2011 International Conference on; 07/2011
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ABSTRACT: Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties for RF circuit design standard and measurement outcomes are presented. The cell parameters presented here are calculated (designed) using 2.0 μm and 0.8 μm technology MOS integrated circuit. In this paper we discussed and found better result in terms of drain current for gate voltage of 2.1 V compare to 1.2 V, calculate the power for these voltages and time constant with help of contact resistance and capacitances.
Industrial Electronics, Control & Robotics (IECR), 2010 International Conference on; 01/2011
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ABSTRACT: In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.
India Conference (INDICON), 2010 Annual IEEE; 01/2011
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ABSTRACT: To avoid the uses of multiple RF chain associated with the multiple antennas, RF switch is most essential component. Multiple antennas systems are used to replace traditional single antennas circuitry in the radio transceiver system in order to improve the transmission capability and reliability. The desired switching system must have low cost and simple structure, yet still can capture all the advantage of Multiple Inputs Multiple Output (MIMO) systems. In this paper, we have proposed a Double Pole Four Throw (DP4T) RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology with inverter property. This switch is low in cost, and capable of selecting data streams to or from the two antennas for transmitting or receiving processes, respectively.
Wireless Communication and Sensor Networks (WCSN), 2009 Fifth IEEE Conference on; 01/2010
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ABSTRACT: In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.
Microelectronics Journal.
