K.S. Yadav

Central Electronics Engineering Research Institute, Pilāni, Rajasthan, India

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Publications (19)2.16 Total impact

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    ABSTRACT: Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not suitable for modern portable devices which demand lesser power consumption. Therefore, we proposed a new Double-Pole Four-Throw (DP4T) switch by using RF CMOS technology and analyzed its performance. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and area could be reduced as compared to already existing switch configuration as SPDT and Double-Pole Double-Throw (DPDT) transceiver switches, which is simply a reduction of signal strength during transmission of the RF signals. The presented result for the proposed DP4T switch reveals the peak output currents (drain current) around 0.116–0.387 mA and a switching speed of 19–36 ps.
    Journal of Circuits System and Computers 07/2012; 21(04). · 0.24 Impact Factor
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    ABSTRACT: Keywords: Cylindrical surrounding double-gate (CSDG) MOSFET Double-gate (DG) MOSFET Resistive and capacitive MOSFET model Advanced design simulator (ADS) Radio frequency RF switch CMOS switch Cross talk VLSI a b s t r a c t In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET.
    Microelectronics Journal 08/2011; 42:1124-1135. · 0.91 Impact Factor
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    V.M. Srivastava, G. Singh, K.S. Yadav
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    ABSTRACT: In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.
    Communication Systems and Network Technologies (CSNT), 2011 International Conference on; 07/2011
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    V.M. Srivastava, G. Singh, K.S. Yadav
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    ABSTRACT: Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties for RF circuit design standard and measurement outcomes are presented. The cell parameters presented here are calculated (designed) using 2.0 μm and 0.8 μm technology MOS integrated circuit. In this paper we discussed and found better result in terms of drain current for gate voltage of 2.1 V compare to 1.2 V, calculate the power for these voltages and time constant with help of contact resistance and capacitances.
    Industrial Electronics, Control & Robotics (IECR), 2010 International Conference on; 01/2011
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    V.M. Srivastava, K.S. Yadav, G. Singh
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    ABSTRACT: In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.
    India Conference (INDICON), 2010 Annual IEEE; 01/2011
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    Wireless Engineering and Technology. 01/2011; 2:15-22.
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    ABSTRACT: In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole four-throw circuit by using independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation, and better isolation with fast switching speed. Keywords45-nm technology–Double-gate MOSFET–DP4T switch–Radio frequency–RF switch–Attenuation–CMOS switch–VLSI
    Journal of Computational Electronics 01/2011; 10(1):229-240. · 1.01 Impact Factor
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    ABSTRACT: In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO2) in place of Silicon-dioxide (SiO2). The performance of HfO2 for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights and working efficiency at high temperature has been discussed. The results for the analysis of this DP4T DG RF CMOS switch with HfO2 includes the basics of the circuit elements required as integrated circuits for the radio frequency communication systems.
    01/2011;
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    ABSTRACT: In this paper, we have explored the designing approach of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This proposed CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements as drain current, resistances at switch ON condition, capacitances, energy stored required for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, ON-resistance is lower which shows that the isolation is better in CSDG MOSFET as compared to single-gate MOSFET and double-gate MOSFET.
    01/2011;
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    ABSTRACT: In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.
    Microelectronics Journal. 01/2011;
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    ABSTRACT: Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to provide a plurality of such switches, where the power and area could be reduced as compared to already existing transceiver switch configuration, which is simply a reduction of signal strength during transmission for RF. Our result shows that the peak output currents in these devices are around 0.387 mA and the switching speed is 30–31 ps.
    01/2011;
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    IJCNS. 01/2011; 4:590-600.
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    Wireless Sensor Network. 01/2011; 3:300-305.
  • V.M. Srivastava, K.S. Yadav, G. Singh
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    ABSTRACT: To avoid the uses of multiple RF chain associated with the multiple antennas, RF switch is most essential component. Multiple antennas systems are used to replace traditional single antennas circuitry in the radio transceiver system in order to improve the transmission capability and reliability. The desired switching system must have low cost and simple structure, yet still can capture all the advantage of Multiple Inputs Multiple Output (MIMO) systems. In this paper, we have proposed a Double Pole Four Throw (DP4T) RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology with inverter property. This switch is low in cost, and capable of selecting data streams to or from the two antennas for transmitting or receiving processes, respectively.
    Wireless Communication and Sensor Networks (WCSN), 2009 Fifth IEEE Conference on; 01/2010
  • V. M. Srivastava, G. Singh, K. S. Yadav
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    ABSTRACT: In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to functionality as compare to simple CMOS switch. This provides a switch with a better attenuation, isolation and switching speed to drive the circuit that does not add appreciable signal propagation delay and does not require additional voltage power supply.
    01/2010;
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    ABSTRACT: In the wireless telecommunication systems, for increasing interest in RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology, for high frequency is greatly integrated. In this paper, we use the Hafnium-dioxide material as dielectric substrate for designing a model of CMOS which is used for double-gate MOSFET in DP4T RF CMOS switch. This proposed model is compact and robust as well as capable to choose data flow to or from the antennas and work as a transceiver switch. We emphasis on the library consist of cells design with HfO2. Here we present the results a cell collection that consist of the basic circuit elements requisite for the high frequency subsystems of integrated circuits as characteristic curve, contact resistances present in switches, charge densities, the potential barrier with contacts available in devices with a reason of Hafnium-dioxide.
    Circuits and Systems. 01/2010; 1:49-53.
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    ABSTRACT: A procedure to characterize oxide thickness and conductor layers that are grown or deposited on semiconductor is by studying the characteristics of a MOS capacitor that is formed of the conductor - insulator - semiconductor layers. For a capacitor formed with oxide thickness of 510 Å (measured optically), here in this research author measures the oxide thickness by the SUPREM Simulator. Its accuracy depends on the quality of models, parameters and numerical techniques it employ. Authors also verify the result by measurment of capacitance at different voltages using LCR meter and the curve drawn through Visual Engineering Environment Programming (VEE Pro) software. Based on the oxide thickness measurement of a MOS capacitor, one can measure the device parameters, mainly the substrate dopant concentration and other parameter. This research was completed in BEL Laboratory.
    International Journal of Computer Applications. 01/2010;
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    ABSTRACT: For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
    International Journal of Computer Applications. 01/2010;
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    ABSTRACT: In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.
    Procedia Engineering. 38:517–521.

Publication Stats

62 Citations
2.16 Total Impact Points

Institutions

  • 2011–2012
    • Central Electronics Engineering Research Institute
      Pilāni, Rajasthan, India
    • Jaypee University of Information Technology
      Solon, Himachal Pradesh, India
  • 2010
    • Jaypee University of Engineering and Technology
      GUX, Madhya Pradesh, India