C. M. Jiao

Northeast Institute of Geography and Agroecology, Beijing, Beijing Shi, China

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Publications (12)33.41 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22±0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24±0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer.
    Solid State Communications 06/2012; 152(11):938–940. · 1.53 Impact Factor
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    ABSTRACT: ZnO film with high crystal quality was prepared on InN/sapphire substrate by metal organic chemical vapor deposition. The diffusion of nitrogen (N) into ZnO film was investigated via Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and low-temperature photoluminescence (LT-PL). AES revealed that some N atoms out-diffused into ZnO film after a rapid thermal annealing (RTA) process, while most of the In atoms remained in InN layers, which was confirmed by XPS. LT-PL spectra at 10 K further confirmed that N atoms diffused into the upper ZnO film and acted as acceptors after RTA. It might be an attractive way to obtain high-quality p-type ZnO:N on InN films by this thermal diffusion doping technique.
    Journal of Applied Physics 12/2011; 110(11). · 2.21 Impact Factor
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    ABSTRACT: XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained.
    Applied Surface Science 01/2011; 257(18):8110-8112. · 2.54 Impact Factor
  • Applied Physics Letters 03/2009; 94(12):9901-. · 3.79 Impact Factor
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    ABSTRACT: MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔEv) of MgO/AlN heterostructures. A value of ΔEv = 0.22±0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of ∼ 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.
    Applied Physics Letters 02/2009; 94(5):052101-052101-3. · 3.79 Impact Factor
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    ABSTRACT: Well-aligned Zn1−xMgxO nanorods and film with Mg-content x from 0 to 0.051 have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) without any catalysts. The characterization results showed that the diameters and lengths of the nanorods were in the range of 20–80 nm and 330–360 nm, which possessed wurtzite structure with a c-axis growth direction. As the increase of Mg precursor flows into the growth chamber, the morphology of Zn1−xMgxO evolves from nanorods to a film with scale-like surface and the height of the nanorods and the film was almost identical, it is suggested that the growth rate along the c-axis was hardly changed while the growth of six equivalent facets of the type {1 0 1¯ 0} of the Zn1−xMgxO has been improved. Photoluminescence and Raman spectra show that the products have a good crystal quality with few oxygen vacancies. With the Mg incorporation, multiple-phonon scattering become weak and broad, and the intensities of all observed vibrational modes decrease. And the ultraviolet near-band-edge emission shows a clear blueshift (x=0.051, as much as 90 meV) and slightly broadening compared with that of pure ZnO nanorods.
    Journal of Crystal Growth 01/2009; · 1.55 Impact Factor
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    ABSTRACT: MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of Mg O / In N heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59±0.23 eV . Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54±0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of Mg O / In N electronic devices.
    Applied Physics Letters 02/2008; · 3.79 Impact Factor
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    ABSTRACT: The valence band offset (VBO) of the wurtzite ZnO∕4H-SiC heterojunction is directly determined to be 1.61±0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50±0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN.
    Applied Physics Letters 01/2008; 92. · 3.79 Impact Factor
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    ABSTRACT: ZnO thin films were grown by metal-organic chemical vapour deposition using methanol as oxidant. Rapid thermal annealing (RTA) was performed in an ambient of one atmosphere oxygen at 900 °C for 60 s. The RTA properties of the films have been characterized using scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence spectra and Hall measurement. The grains of the film were well coalesced and the surface became denser after RTA. The full-width at half maximum of rocking curves was only 496 arcsec. The ZnO films were also proved to have good optical quality. The Hall mobility increased to 43.2 cm2 V−1 s−1 while the electron concentration decreased to 6.6 × 1016 cm−3. It is found that methanol is a potential oxidant for ZnO growth and the quality of ZnO film can be improved substantially through RTA.
    Journal of Physics D Applied Physics 09/2007; 40(19):6010. · 2.53 Impact Factor
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    ABSTRACT: ZnO vertical well-aligned nanorods were grown on AlN/sapphire by using metal-organic chemical vapor deposition. We first observed the ZnO net-like structures under the nanorods. The different strain was determined in these two layers by using double crystal X-ray diffraction, Raman spectra, which revealed that the nanorods were relaxed and the net-like structures were strained. The optical properties of two layers were measured by using the cathodoluminescence and photoluminescence and the shift of UV peaks was observed. Moreover, the growth mechanism of the ZnO nanorods and the net-like structures is discussed.
    Journal of Crystal Growth 01/2007; 306(1):12-15. · 1.55 Impact Factor
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    ABSTRACT: On the metalorganic chemical vapour deposition growth of AlN, by adjusting H2+N2 mixture gas components, we can gradually control island dimension. During the Volmer-Weber growth, 2-dimensional coalescent islands induces an intrinsic tensile stress. Then, this process can control the in-plane stress: with the N2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 GPa tensile stress to -1.2 GPa compressive stress. Especially, with the 0.5 slm N2 + 2.5 slm H2 mixture gas, the in-plane stress is only 0.1 GPa, which is close to the complete relaxation state. Under this condition, this sample has good crystal and optical qualities.
    Journal of Physics D Applied Physics 01/2007; 40:7462-7466. · 2.53 Impact Factor
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    ABSTRACT: We observed a transition from film to vertically well-aligned nanorods for ZnO grown on sapphire 0001 substrates by metalorganic chemical vapor deposition. A growth mechanism was proposed to explain such a transition. Vertically well-aligned homogeneous nanorods with average diameters of 30, 45, 60, and 70 nm were grown with the c-axis orientation. Raman scattering showed that the E 2 high mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. This dependence suggests a stress-driven diameter-controlled mechanism for ZnO nanorod arrays grown on sapphire 0001 substrates. © 2005 American Institute of Physics. Zinc oxide ZnO has been paid extensive attention to in recent years because of its potential in ultraviolet UV light-emitting diodes and lasers, which can even work at fairly high temperatures. 1,2 Due to its large excitonic binding en-ergy of 60 meV, which is much larger than that of GaN 25 meV and the thermal energy 26 meV at room temperature, 3 ZnO-based UV lasers should possess more ef-ficient excitonic laser action and thus are promising to com-pete with GaN-based ones for next-generation data-storage lasers. One-dimensional 1D nanostructures of semiconduc-tors including GaAs, GaP, Si, CdSe, and GaN have been demonstrated in realizing low-threshold optical gain due to quantum confinement. 3,4 Similarly aiming at further enhanc-ing optical emission efficiency, a variety of 1D ZnO nano-structures were recently investigated. 3,5–7 In contrast to macrodisordered 1D ones, well-aligned nanostructures in large area provide opportunities for fabri-cating nanodevices in a macroscopic way. The advantages of 1D nanostructures not only can be realized, but also may be enhanced due to the homogeneous behavior of well-aligned nanostructures. Huang et al. observed the room-temperature UV lasing in ZnO nanowire arrays, which had a lower lasing threshold than disordered particles or films. 3 1D ZnO nano-rod arrays have been reported, 3,5–7 however, it remains a challenge to change the diameter of nanorods in a control-lable way, which is required for nanoarray light emitters con-sidering quantum confinement effect. Moreover, it is neces-sary to compare the photon modes of ZnO nanorod arrays of different diameters in order to better understand their optical properties. In this letter, we report the transition from film to verti-cally well-aligned nanorods for ZnO grown on sapphire 0001 substrates by one-step growth without any interrup-tion and temperature regulation during the one-hour metalor-ganic chemical vapor deposition MOCVD reaction process. We fabricated ZnO nanorod arrays of different diameters in a controllable way and found morphology-dependent Raman scattering.
    Applied Physics Letters 11/2005; · 3.79 Impact Factor