K.P Hilton

Publications (2)0 Total impact

• Article: Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

  D.J Morrison, K.P Hilton, M.J Uren, N.G Wright, C.M Johnson, A.G O’Neill
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  ABSTRACT: The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250°C.
  Materials Science and Engineering: B.
• Article: Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

  D.J Morrison, N.G Wright, A.B Horsfall, C.M Johnson, A.G O’Neill, A.P Knights, K.P Hilton, M.J Uren
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  ABSTRACT: The effects of post-implantation annealing on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned Ar+ ion implantation have been investigated. Results show that the Ar+ edge termination may be modelled as a shunt linear resistive path at low to moderate reverse bias levels and at low forward bias levels. Low temperature (400–700°C) annealing is shown to increase the equivalent resistance of the edge termination by two orders of magnitude without significant effect on the breakdown voltage. Annealing temperatures above 600°C are, however, shown to degrade the on-state performance. A breakdown voltage of 1530 V was achieved on the implanted and annealed samples, representing 90% of the theoretical parallel plane breakdown voltage. Temperature dependent measurements, made over the temperature range 25–400°C show that the equivalent resistance of the edge termination is thermally activated with an exponential temperature coefficient of −0.02 K−1. Behaviour at moderate forward bias levels is typical of thermionic emission whilst operation at high forward bias is dominated by a linear series resistance which shows a quadratic temperature dependence, increasing by a factor of 6 over the range 25–400°C.
  Solid-State Electronics.