M. Suleiman

Publications (3)7.5 Total impact

• Article: Growth of ZnO layers for transparent and flexible electronics

  A.C. Mofor, A.S. Bakin, B. Postels, M. Suleiman, A. Elshaer, A. Waag
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  ABSTRACT: We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 °C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm2 V−1 s−1. Furthermore, we show how these layers can be processed with conventional device processing techniques.
  Thin Solid Films 02/2008; · 1.89 Impact Factor
• Article: Electrodeposition of ZnO nanorods for device application

  B. Postels, A. Bakin, H.-H. Wehmann, M. Suleiman, T. Weimann, P. Hinze, A. Waag
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  ABSTRACT: We report the electrochemical growth of zinc oxide nanorods in a zinc nitrate/hexamethylenetetramine solution at 70°C. High-density vertical nanorods were grown on Au films on silicon substrates with a texture coefficient better than 99.9%. By varying the reactant concentration the diameter can be varied between 100 and 250nm, with corresponding lengths of 1 to 4μm. Furthermore, this approach was used for the selective growth on Ti/Au strip conductors ordered in an interdigitated structure on an insulating substrate. We achieved the growth of ZnO nanorods between neighbouring strip conductors bridging the gap between them. In this configuration the nanorods are already contacted and electrical measurements can be directly performed. First I–V measurements show a good conductivity of the as-grown nanorods and the resistance could be estimated to be 0.1Ω cm. Under UV illumination the ZnO nanorods demonstrate a photoconductivity, but only after annealing the sample at 300°C in N2.
  Applied Physics A 01/2008; 91(4):595-599. · 1.63 Impact Factor
• Article: A two-step obtainment of quantum confinement in ZnO nanorods

  A C Mofor, A El-Shaer, M Suleiman, A Bakin, A Waag
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  ABSTRACT: ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn0.85Mg0.15O heterostructures were grown on the nanorods using molecular beam epitaxy. The nanorods are well aligned along the c-axis of ZnO, as indicated by a very narrow rocking curve full width at half maximum. Quantum confinement was clearly observed within the ZnO well for different well widths. The quantum wells show photoluminescence peaks with a full width at half maximum as small as 15 meV.
  Nanotechnology 09/2006; 17(19):4859. · 3.98 Impact Factor